JPS56161668A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56161668A
JPS56161668A JP6411880A JP6411880A JPS56161668A JP S56161668 A JPS56161668 A JP S56161668A JP 6411880 A JP6411880 A JP 6411880A JP 6411880 A JP6411880 A JP 6411880A JP S56161668 A JPS56161668 A JP S56161668A
Authority
JP
Japan
Prior art keywords
wire
polysilicon
wiring layer
static ram
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6411880A
Other languages
Japanese (ja)
Inventor
Koichi Nagasawa
Yoshio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6411880A priority Critical patent/JPS56161668A/en
Publication of JPS56161668A publication Critical patent/JPS56161668A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To accelerate the operation of a circuit by forming the second wiring layer through an insulating film on the first wire containing polysilicon gate, connecting between the wires and thus decreasing the resistance of the word line of, for example, a static RAM. CONSTITUTION:In a static RAM of Si gate structure, a word line and a cell resistance are formed of polysilicon wire 4 extending to a gate. An interlayer insulating film 5 is formed on the wire 4, and windows 6 are formed at the film 5. Then, the second wiring layer 7 is formed of polysilicon (or aluminum) on the top of the wire 4, and the wires are connected via the windows 6. Such wiring structure can reduce the substantial resistance value of the wiring layer added with resistor and can accelerate the operation of the static RAM, for example, of polysilicon gate structure.
JP6411880A 1980-05-16 1980-05-16 Semiconductor device Pending JPS56161668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6411880A JPS56161668A (en) 1980-05-16 1980-05-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6411880A JPS56161668A (en) 1980-05-16 1980-05-16 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP63107645A Division JPS63296264A (en) 1988-05-02 1988-05-02 Static ram
JP1090714A Division JPH02132856A (en) 1989-04-12 1989-04-12 Manufacture of semiconductor memory

Publications (1)

Publication Number Publication Date
JPS56161668A true JPS56161668A (en) 1981-12-12

Family

ID=13248823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6411880A Pending JPS56161668A (en) 1980-05-16 1980-05-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56161668A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212696A (en) * 1982-06-03 1983-12-10 Mitsubishi Electric Corp Semiconductor memory device
JPS594159A (en) * 1982-06-30 1984-01-10 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS59155165A (en) * 1983-02-23 1984-09-04 Toshiba Corp Semiconductor memory device
JPS59155955A (en) * 1983-02-25 1984-09-05 Mitsubishi Electric Corp Semiconductor memory device
JPS59210662A (en) * 1983-05-16 1984-11-29 Nec Corp Read only memory
JPS59217356A (en) * 1983-05-25 1984-12-07 Nec Corp Semiconductor memory device
JPS604253A (en) * 1983-06-23 1985-01-10 Nec Corp Semiconductor integrated circuit memory
JPS604252A (en) * 1983-06-22 1985-01-10 Nec Corp Semiconductor integrated circuit memory device
US4528582A (en) * 1983-09-21 1985-07-09 General Electric Company Interconnection structure for polycrystalline silicon resistor and methods of making same
EP0181600A2 (en) * 1984-11-14 1986-05-21 Kabushiki Kaisha Toshiba Signal transmission circuit in a semiconductor integrated circuit
JPS6387763A (en) * 1987-08-13 1988-04-19 Nec Corp Semiconductor integrated circuit memory
JPS63158851A (en) * 1986-12-22 1988-07-01 Nec Corp Semiconductor integrated circuit device
JPS63228666A (en) * 1987-03-18 1988-09-22 Hitachi Ltd Semiconductor integrated circuit device
JPS63239862A (en) * 1987-03-27 1988-10-05 Hitachi Ltd Semiconductor storage device
US4961104A (en) * 1987-04-24 1990-10-02 Nec Corporation Multi-level wiring structure of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106693A (en) * 1976-03-05 1977-09-07 Hitachi Ltd Integrated circuit
JPS55120150A (en) * 1979-03-09 1980-09-16 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106693A (en) * 1976-03-05 1977-09-07 Hitachi Ltd Integrated circuit
JPS55120150A (en) * 1979-03-09 1980-09-16 Toshiba Corp Semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212696A (en) * 1982-06-03 1983-12-10 Mitsubishi Electric Corp Semiconductor memory device
JPS6228517B2 (en) * 1982-06-03 1987-06-20 Mitsubishi Electric Corp
JPS594159A (en) * 1982-06-30 1984-01-10 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS59155165A (en) * 1983-02-23 1984-09-04 Toshiba Corp Semiconductor memory device
JPH059944B2 (en) * 1983-02-23 1993-02-08 Tokyo Shibaura Electric Co
JPS59155955A (en) * 1983-02-25 1984-09-05 Mitsubishi Electric Corp Semiconductor memory device
JPS59210662A (en) * 1983-05-16 1984-11-29 Nec Corp Read only memory
JPH0345551B2 (en) * 1983-05-25 1991-07-11 Nippon Electric Co
JPS59217356A (en) * 1983-05-25 1984-12-07 Nec Corp Semiconductor memory device
JPS604252A (en) * 1983-06-22 1985-01-10 Nec Corp Semiconductor integrated circuit memory device
JPS604253A (en) * 1983-06-23 1985-01-10 Nec Corp Semiconductor integrated circuit memory
US4528582A (en) * 1983-09-21 1985-07-09 General Electric Company Interconnection structure for polycrystalline silicon resistor and methods of making same
US4687949A (en) * 1984-11-14 1987-08-18 Kabushiki Kaisha Toshiba Signal transmission circuit in a semiconductor integrated circuit
EP0181600A2 (en) * 1984-11-14 1986-05-21 Kabushiki Kaisha Toshiba Signal transmission circuit in a semiconductor integrated circuit
JPS63158851A (en) * 1986-12-22 1988-07-01 Nec Corp Semiconductor integrated circuit device
JPS63228666A (en) * 1987-03-18 1988-09-22 Hitachi Ltd Semiconductor integrated circuit device
JPS63239862A (en) * 1987-03-27 1988-10-05 Hitachi Ltd Semiconductor storage device
US4961104A (en) * 1987-04-24 1990-10-02 Nec Corporation Multi-level wiring structure of semiconductor device
JPS6387763A (en) * 1987-08-13 1988-04-19 Nec Corp Semiconductor integrated circuit memory

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