JPS5756934A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5756934A
JPS5756934A JP13201680A JP13201680A JPS5756934A JP S5756934 A JPS5756934 A JP S5756934A JP 13201680 A JP13201680 A JP 13201680A JP 13201680 A JP13201680 A JP 13201680A JP S5756934 A JPS5756934 A JP S5756934A
Authority
JP
Japan
Prior art keywords
metallic film
optimum etching
semiconductor element
stepwisely
varying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13201680A
Other languages
Japanese (ja)
Inventor
Tsutomu Koshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13201680A priority Critical patent/JPS5756934A/en
Publication of JPS5756934A publication Critical patent/JPS5756934A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To judge the optimum etching condition from the difference of etchings due to the fineness by forming a figure varying in the width sequentially continuously or stepwisely on the same surface of resin film simultaneously with desired pattern. CONSTITUTION:A resin mask of figure 1 varying in width continuously or stepwisely is formed on a metallic film, and is etched simultaneously with the metallic film on a semiconductor region. Since it is sequentially etched from narrow width part, an optimum etching can be performed only by mechanical judgement if the index of the figure position corresponding to the optimum etching time of the metallic film of a semiconductor element is determined in advance.
JP13201680A 1980-09-22 1980-09-22 Manufacture of semiconductor element Pending JPS5756934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13201680A JPS5756934A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13201680A JPS5756934A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5756934A true JPS5756934A (en) 1982-04-05

Family

ID=15071554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13201680A Pending JPS5756934A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5756934A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2597976A1 (en) * 1986-04-24 1987-10-30 Tissier Annie METHOD FOR MEASURING CHARACTERISTIC PARAMETERS OF A THIN LAYER AND APPARATUS FOR IMPLEMENTING SAID METHOD
US4863548A (en) * 1987-03-21 1989-09-05 Samsung Electronics Co., Ltd. Test pattern for use monitoring variations of critical dimensions of patterns during fabrication of semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2597976A1 (en) * 1986-04-24 1987-10-30 Tissier Annie METHOD FOR MEASURING CHARACTERISTIC PARAMETERS OF A THIN LAYER AND APPARATUS FOR IMPLEMENTING SAID METHOD
US4863548A (en) * 1987-03-21 1989-09-05 Samsung Electronics Co., Ltd. Test pattern for use monitoring variations of critical dimensions of patterns during fabrication of semiconductor devices

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