JPS55141747A - Thin film element - Google Patents
Thin film elementInfo
- Publication number
- JPS55141747A JPS55141747A JP4797379A JP4797379A JPS55141747A JP S55141747 A JPS55141747 A JP S55141747A JP 4797379 A JP4797379 A JP 4797379A JP 4797379 A JP4797379 A JP 4797379A JP S55141747 A JPS55141747 A JP S55141747A
- Authority
- JP
- Japan
- Prior art keywords
- basic pattern
- thin film
- resist
- film element
- arcuate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
Abstract
PURPOSE:To fabricate a thin film element having preferable workability by photoetching several times to form a substrate pattern on a glazed ceramic substrate so as to form arcuate steps at both ends of the basic pattern and forming a forming resist thereon. CONSTITUTION:A basic pattern resist 11 is formed on a glazed ceramic substrate 1, and a basic pattern 13 is formed thereon by etching process. Then, a basic pattern resist 12 having slightly narrower than the basic pattern 13 is formed thereon and so etched that the wide surface of the basic pattern 13 is slightly retained. Thus, the basic pattern 13 is formed with arcuate steps 9 at both right and left side ends thereof, and the resultant steps 9 which are continuously etched at the edges may become arcuate. When a forming resist 8 is formed on the basic pattern 13' of this shape, there can be obtained a thin film element in which no gap is formed but it is formed integral.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4797379A JPS55141747A (en) | 1979-04-20 | 1979-04-20 | Thin film element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4797379A JPS55141747A (en) | 1979-04-20 | 1979-04-20 | Thin film element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55141747A true JPS55141747A (en) | 1980-11-05 |
Family
ID=12790251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4797379A Pending JPS55141747A (en) | 1979-04-20 | 1979-04-20 | Thin film element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55141747A (en) |
-
1979
- 1979-04-20 JP JP4797379A patent/JPS55141747A/en active Pending
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