JPS5529188A - Controlling method of shape of pattern - Google Patents
Controlling method of shape of patternInfo
- Publication number
- JPS5529188A JPS5529188A JP10352778A JP10352778A JPS5529188A JP S5529188 A JPS5529188 A JP S5529188A JP 10352778 A JP10352778 A JP 10352778A JP 10352778 A JP10352778 A JP 10352778A JP S5529188 A JPS5529188 A JP S5529188A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- baking
- post
- etching
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To increase pattern-controlling properties by post-baking a resist pattern formed on a member to be processed, at such temperatures that the pattern width does not change, but the shape of section changes, and then by applying ion-etching.
CONSTITUTION: Two layers of Cr and Au are vapor-deposited on a substrate 1 to give a film to be processed 2, and a given shape of resist pattern 3 is formed on the layers. This member is then placed in a thermostat ic oven and subjected to post-baking at such temperatures that the pattern width does not change, but only the shape of the section changes. Then, after applying masking, it is subjected to ion-etching or reverse sputtering etching to selectively remove the film 2, and the side wall of the remaining film 2 beneath the pattern 3 is provided with a given angle θ. When the temperature of the post-baking is controlled to 130°C and the partial pressure of oxygen at the etching is controlled to 1.5×10-4 Torr, the angle can be adjusted to about 40°. When no post-baking is applied, the angle is 70 to 80°, and thus it can be seen that a better angle is obtainable. Furthermore, there is no formation of damage on the film 2.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10352778A JPS5529188A (en) | 1978-08-24 | 1978-08-24 | Controlling method of shape of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10352778A JPS5529188A (en) | 1978-08-24 | 1978-08-24 | Controlling method of shape of pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5529188A true JPS5529188A (en) | 1980-03-01 |
Family
ID=14356369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10352778A Pending JPS5529188A (en) | 1978-08-24 | 1978-08-24 | Controlling method of shape of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5529188A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582029A (en) * | 1981-06-26 | 1983-01-07 | Seiko Epson Corp | Etching method for insulating film on semiconductor substrate |
| JPS61168924A (en) * | 1985-01-22 | 1986-07-30 | Seiko Instr & Electronics Ltd | Selective etching method of thin chromium film |
| US11796922B2 (en) * | 2019-09-30 | 2023-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS518788A (en) * | 1974-07-11 | 1976-01-23 | Nippon Musen Irigaku Kenkyusho | Choonpabiimuno tobikoshitoshanyoru shindanhoshiki |
| JPS5192179A (en) * | 1975-02-10 | 1976-08-12 | Bisaipataanno keiseihoho |
-
1978
- 1978-08-24 JP JP10352778A patent/JPS5529188A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS518788A (en) * | 1974-07-11 | 1976-01-23 | Nippon Musen Irigaku Kenkyusho | Choonpabiimuno tobikoshitoshanyoru shindanhoshiki |
| JPS5192179A (en) * | 1975-02-10 | 1976-08-12 | Bisaipataanno keiseihoho |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582029A (en) * | 1981-06-26 | 1983-01-07 | Seiko Epson Corp | Etching method for insulating film on semiconductor substrate |
| JPS61168924A (en) * | 1985-01-22 | 1986-07-30 | Seiko Instr & Electronics Ltd | Selective etching method of thin chromium film |
| US11796922B2 (en) * | 2019-09-30 | 2023-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices |
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