JPS5749234A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5749234A
JPS5749234A JP12438480A JP12438480A JPS5749234A JP S5749234 A JPS5749234 A JP S5749234A JP 12438480 A JP12438480 A JP 12438480A JP 12438480 A JP12438480 A JP 12438480A JP S5749234 A JPS5749234 A JP S5749234A
Authority
JP
Japan
Prior art keywords
specimen
reactive gas
chlorided
silicide
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12438480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02850B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP12438480A priority Critical patent/JPS5749234A/ja
Publication of JPS5749234A publication Critical patent/JPS5749234A/ja
Publication of JPH02850B2 publication Critical patent/JPH02850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP12438480A 1980-09-08 1980-09-08 Plasma etching method Granted JPS5749234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12438480A JPS5749234A (en) 1980-09-08 1980-09-08 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12438480A JPS5749234A (en) 1980-09-08 1980-09-08 Plasma etching method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2291003A Division JP2564702B2 (ja) 1990-10-29 1990-10-29 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
JPS5749234A true JPS5749234A (en) 1982-03-23
JPH02850B2 JPH02850B2 (enrdf_load_stackoverflow) 1990-01-09

Family

ID=14884067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12438480A Granted JPS5749234A (en) 1980-09-08 1980-09-08 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5749234A (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980778A (ja) * 1982-10-30 1984-05-10 Daikin Ind Ltd エツチング方法
JPS59214226A (ja) * 1983-05-19 1984-12-04 Matsushita Electric Ind Co Ltd エツチング方法
JPS59219470A (ja) * 1983-05-25 1984-12-10 Furukawa Electric Co Ltd:The プラズマ表面処理方法
JPS6020516A (ja) * 1983-07-14 1985-02-01 Tokyo Denshi Kagaku Kabushiki 窒化シリコン膜のドライエツチング方法
JPS61144026A (ja) * 1984-12-17 1986-07-01 Toshiba Corp ドライエツチング方法
JPS6310522A (ja) * 1986-07-02 1988-01-18 Sony Corp ドライエツチング方法
JPS63151024A (ja) * 1986-12-16 1988-06-23 Semiconductor Energy Lab Co Ltd エツチング方法
JPS63262483A (ja) * 1987-04-01 1988-10-28 アルカテル・セイテ リン化インジウム部分の表面のエッチング方法
JPH02503614A (ja) * 1987-06-01 1990-10-25 コミッサレ・ア・レナジイ・アトミック ガスプラズマによる食刻方法
JPH02309634A (ja) * 1989-05-24 1990-12-25 Fujitsu Ltd 半導体装置の製造方法
JPH0464365U (enrdf_load_stackoverflow) * 1990-10-09 1992-06-02
JPH04211126A (ja) * 1991-01-18 1992-08-03 Hitachi Ltd ドライエッチング方法
JPH04211125A (ja) * 1991-01-18 1992-08-03 Hitachi Ltd ドライエッチング装置
EP0924282A1 (en) * 1997-12-18 1999-06-23 Central Glass Company, Limited Gas for removing a deposit and its use
JP2010165954A (ja) * 2009-01-16 2010-07-29 Ulvac Japan Ltd 真空処理装置及び真空処理方法
JP2015060934A (ja) * 2013-09-18 2015-03-30 株式会社日立ハイテクノロジーズ プラズマ処理方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980778A (ja) * 1982-10-30 1984-05-10 Daikin Ind Ltd エツチング方法
JPS59214226A (ja) * 1983-05-19 1984-12-04 Matsushita Electric Ind Co Ltd エツチング方法
JPS59219470A (ja) * 1983-05-25 1984-12-10 Furukawa Electric Co Ltd:The プラズマ表面処理方法
JPS6020516A (ja) * 1983-07-14 1985-02-01 Tokyo Denshi Kagaku Kabushiki 窒化シリコン膜のドライエツチング方法
JPS61144026A (ja) * 1984-12-17 1986-07-01 Toshiba Corp ドライエツチング方法
JPS6310522A (ja) * 1986-07-02 1988-01-18 Sony Corp ドライエツチング方法
JPS63151024A (ja) * 1986-12-16 1988-06-23 Semiconductor Energy Lab Co Ltd エツチング方法
JPS63262483A (ja) * 1987-04-01 1988-10-28 アルカテル・セイテ リン化インジウム部分の表面のエッチング方法
JPH02503614A (ja) * 1987-06-01 1990-10-25 コミッサレ・ア・レナジイ・アトミック ガスプラズマによる食刻方法
JPH02309634A (ja) * 1989-05-24 1990-12-25 Fujitsu Ltd 半導体装置の製造方法
JPH0464365U (enrdf_load_stackoverflow) * 1990-10-09 1992-06-02
JPH04211126A (ja) * 1991-01-18 1992-08-03 Hitachi Ltd ドライエッチング方法
JPH04211125A (ja) * 1991-01-18 1992-08-03 Hitachi Ltd ドライエッチング装置
EP0924282A1 (en) * 1997-12-18 1999-06-23 Central Glass Company, Limited Gas for removing a deposit and its use
JP2010165954A (ja) * 2009-01-16 2010-07-29 Ulvac Japan Ltd 真空処理装置及び真空処理方法
JP2015060934A (ja) * 2013-09-18 2015-03-30 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
JPH02850B2 (enrdf_load_stackoverflow) 1990-01-09

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