JPH02850B2 - - Google Patents

Info

Publication number
JPH02850B2
JPH02850B2 JP12438480A JP12438480A JPH02850B2 JP H02850 B2 JPH02850 B2 JP H02850B2 JP 12438480 A JP12438480 A JP 12438480A JP 12438480 A JP12438480 A JP 12438480A JP H02850 B2 JPH02850 B2 JP H02850B2
Authority
JP
Japan
Prior art keywords
etching
plasma
gas
chloride
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12438480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5749234A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP12438480A priority Critical patent/JPS5749234A/ja
Publication of JPS5749234A publication Critical patent/JPS5749234A/ja
Publication of JPH02850B2 publication Critical patent/JPH02850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP12438480A 1980-09-08 1980-09-08 Plasma etching method Granted JPS5749234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12438480A JPS5749234A (en) 1980-09-08 1980-09-08 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12438480A JPS5749234A (en) 1980-09-08 1980-09-08 Plasma etching method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2291003A Division JP2564702B2 (ja) 1990-10-29 1990-10-29 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
JPS5749234A JPS5749234A (en) 1982-03-23
JPH02850B2 true JPH02850B2 (enrdf_load_stackoverflow) 1990-01-09

Family

ID=14884067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12438480A Granted JPS5749234A (en) 1980-09-08 1980-09-08 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5749234A (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0651915B2 (ja) * 1982-10-30 1994-07-06 ダイキン工業株式会社 エツチング方法
JPS59214226A (ja) * 1983-05-19 1984-12-04 Matsushita Electric Ind Co Ltd エツチング方法
JPS59219470A (ja) * 1983-05-25 1984-12-10 Furukawa Electric Co Ltd:The プラズマ表面処理方法
JPS6020516A (ja) * 1983-07-14 1985-02-01 Tokyo Denshi Kagaku Kabushiki 窒化シリコン膜のドライエツチング方法
JPS61144026A (ja) * 1984-12-17 1986-07-01 Toshiba Corp ドライエツチング方法
JPH0834204B2 (ja) * 1986-07-02 1996-03-29 ソニー株式会社 ドライエツチング方法
JP2660244B2 (ja) * 1986-12-16 1997-10-08 株式会社 半導体エネルギー研究所 表面処理方法
FR2613381B1 (fr) * 1987-04-01 1989-06-23 Cit Alcatel Procede d'attaque d'une surface d'une piece en phosphure d'indium
FR2616030A1 (fr) * 1987-06-01 1988-12-02 Commissariat Energie Atomique Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede
JP2939269B2 (ja) * 1989-05-24 1999-08-25 富士通株式会社 半導体装置の製造方法
JPH0725171Y2 (ja) * 1990-10-09 1995-06-07 高章 吉田 吸引式調髪器
JPH0652726B2 (ja) * 1991-01-18 1994-07-06 株式会社日立製作所 ドライエッチング方法
JP2509389B2 (ja) * 1991-01-18 1996-06-19 株式会社日立製作所 ドライエッチング装置
TW466266B (en) * 1997-12-18 2001-12-01 Central Glass Co Ltd Gas for removing deposit and removal method using same
JP5140608B2 (ja) * 2009-01-16 2013-02-06 株式会社アルバック 真空処理装置及び真空処理方法
JP2015060934A (ja) * 2013-09-18 2015-03-30 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
JPS5749234A (en) 1982-03-23

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