JPS5396938A - Dry etching apparatus - Google Patents
Dry etching apparatusInfo
- Publication number
- JPS5396938A JPS5396938A JP1071677A JP1071677A JPS5396938A JP S5396938 A JPS5396938 A JP S5396938A JP 1071677 A JP1071677 A JP 1071677A JP 1071677 A JP1071677 A JP 1071677A JP S5396938 A JPS5396938 A JP S5396938A
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- etching apparatus
- ions
- discharge
- active atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
PURPOSE: To carry out etching with less undercut, by discharging gas which will produce active atoms (or molecule) or ions by discharge in a discahrging part and, in the course of this discharge, placing a sample to etch it plasma-chemically with the above-mentioned active atoms (or molecules) or ions.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1071677A JPS5939508B2 (en) | 1977-02-04 | 1977-02-04 | dry etching equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1071677A JPS5939508B2 (en) | 1977-02-04 | 1977-02-04 | dry etching equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5396938A true JPS5396938A (en) | 1978-08-24 |
JPS5939508B2 JPS5939508B2 (en) | 1984-09-25 |
Family
ID=11758017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1071677A Expired JPS5939508B2 (en) | 1977-02-04 | 1977-02-04 | dry etching equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5939508B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5879721A (en) * | 1981-11-06 | 1983-05-13 | Hitachi Ltd | Tool for wafer etching |
JPS61110782A (en) * | 1984-11-05 | 1986-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Reactive ion etching method |
JPS61130493A (en) * | 1984-11-28 | 1986-06-18 | Tokuda Seisakusho Ltd | Dry etching method |
JPH03274291A (en) * | 1990-10-29 | 1991-12-05 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
JPH08172081A (en) * | 1995-08-28 | 1996-07-02 | Hitachi Ltd | Plasma surface treater |
-
1977
- 1977-02-04 JP JP1071677A patent/JPS5939508B2/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5879721A (en) * | 1981-11-06 | 1983-05-13 | Hitachi Ltd | Tool for wafer etching |
JPS61110782A (en) * | 1984-11-05 | 1986-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Reactive ion etching method |
JPS6366912B2 (en) * | 1984-11-05 | 1988-12-22 | Nippon Telegraph & Telephone | |
JPS61130493A (en) * | 1984-11-28 | 1986-06-18 | Tokuda Seisakusho Ltd | Dry etching method |
JPS6316467B2 (en) * | 1984-11-28 | 1988-04-08 | Tokuda Seisakusho Kk | |
JPH03274291A (en) * | 1990-10-29 | 1991-12-05 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
JPH08172081A (en) * | 1995-08-28 | 1996-07-02 | Hitachi Ltd | Plasma surface treater |
Also Published As
Publication number | Publication date |
---|---|
JPS5939508B2 (en) | 1984-09-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5329076A (en) | Plasma treating apparatus of semiconductor substrates | |
JPS5291650A (en) | Continuous gas plasma etching apparatus | |
JPS5396938A (en) | Dry etching apparatus | |
JPS5381289A (en) | Ion-molecule reaction mass spectrometer | |
JPS51144573A (en) | Large size flat panel | |
JPS5213390A (en) | Density measuring apparatus | |
JPS526252A (en) | Collapsible-type stage device. | |
JPS5214374A (en) | Treatment equpment for ion beam | |
JPS531398A (en) | Ion implanting chamber | |
JPS52150959A (en) | Electronic microscope or its similar device | |
JPS5230263A (en) | Cold trap device | |
JPS524479A (en) | Powder treatment process using gas ions | |
JPS5221574A (en) | Vacuum multiplying force device | |
JPS5250690A (en) | Etching process | |
JPS5224569A (en) | Thermoelectromotive force element | |
JPS53106576A (en) | Ion etching device | |
JPS52108544A (en) | Freezing device | |
JPS5258169A (en) | Impinging type separator | |
JPS5284544A (en) | High frequency heating apparatus | |
JPS51121840A (en) | High frequency heating apparatus | |
JPS5218212A (en) | Movable blade-type rotary compressor | |
JPS5271972A (en) | Acceleration tube | |
JPS52131466A (en) | Plasma etching method | |
JPS5284545A (en) | High frequency heating apparatus | |
JPS53134790A (en) | Ozone generator |