JPS5747876A - Plasma etching apparatus and method - Google Patents

Plasma etching apparatus and method

Info

Publication number
JPS5747876A
JPS5747876A JP55121007A JP12100780A JPS5747876A JP S5747876 A JPS5747876 A JP S5747876A JP 55121007 A JP55121007 A JP 55121007A JP 12100780 A JP12100780 A JP 12100780A JP S5747876 A JPS5747876 A JP S5747876A
Authority
JP
Japan
Prior art keywords
substance
chamber
valve
ccl
opened
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55121007A
Other languages
English (en)
Other versions
JPS6353268B2 (ja
Inventor
Takashi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55121007A priority Critical patent/JPS5747876A/ja
Priority to US06/296,305 priority patent/US4442338A/en
Priority to DE8181106743T priority patent/DE3163085D1/de
Priority to EP81106743A priority patent/EP0047002B1/en
Priority to DD81233021A priority patent/DD207927A5/de
Publication of JPS5747876A publication Critical patent/JPS5747876A/ja
Publication of JPS6353268B2 publication Critical patent/JPS6353268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
    • Y10S422/906—Plasma or ion generation means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP55121007A 1980-09-03 1980-09-03 Plasma etching apparatus and method Granted JPS5747876A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55121007A JPS5747876A (en) 1980-09-03 1980-09-03 Plasma etching apparatus and method
US06/296,305 US4442338A (en) 1980-09-03 1981-08-26 Plasma etching apparatus
DE8181106743T DE3163085D1 (en) 1980-09-03 1981-08-28 Plasma etching apparatus
EP81106743A EP0047002B1 (en) 1980-09-03 1981-08-28 Plasma etching apparatus
DD81233021A DD207927A5 (de) 1980-09-03 1981-09-03 Plasmaaetzvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121007A JPS5747876A (en) 1980-09-03 1980-09-03 Plasma etching apparatus and method

Publications (2)

Publication Number Publication Date
JPS5747876A true JPS5747876A (en) 1982-03-18
JPS6353268B2 JPS6353268B2 (ja) 1988-10-21

Family

ID=14800474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121007A Granted JPS5747876A (en) 1980-09-03 1980-09-03 Plasma etching apparatus and method

Country Status (5)

Country Link
US (1) US4442338A (ja)
EP (1) EP0047002B1 (ja)
JP (1) JPS5747876A (ja)
DD (1) DD207927A5 (ja)
DE (1) DE3163085D1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213429A (ja) * 1982-06-07 1983-12-12 Nec Corp ドライエツチング装置
JPS593927A (ja) * 1982-06-29 1984-01-10 Fujitsu Ltd 薄膜のエツチング方法
JPS60174242U (ja) * 1984-04-17 1985-11-19 株式会社日立国際電気 リアクテイブイオンエツチング装置
JPS61133316A (ja) * 1984-11-30 1986-06-20 Tokuda Seisakusho Ltd 熱処理装置
JPS61133314A (ja) * 1984-11-30 1986-06-20 Tokuda Seisakusho Ltd 熱処理装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017922A (ja) * 1983-07-12 1985-01-29 Matsushita Electric Ind Co Ltd 反応性イオンエツチング法
US4544418A (en) * 1984-04-16 1985-10-01 Gibbons James F Process for high temperature surface reactions in semiconductor material
US4668366A (en) * 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor
EP0197044A1 (en) * 1984-10-01 1986-10-15 Tegal Corporation Process for etching polysilicon with freon 11 and another gas
US4737235A (en) * 1984-10-01 1988-04-12 Tegal Corporation Process for polysilicon with freon 11 and another gas
US4695700A (en) * 1984-10-22 1987-09-22 Texas Instruments Incorporated Dual detector system for determining endpoint of plasma etch process
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US5021138A (en) * 1985-01-17 1991-06-04 Babu Suryadevara V Side source center sink plasma reactor
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
US4827866A (en) * 1986-02-24 1989-05-09 Northrop Corporation Method and apparatus for treating an article in a heated environment
US4880489A (en) * 1986-08-26 1989-11-14 Voest-Alpine Aktiengesellschaft Apparatus for plasma etching circuit boards or the like
US4885074A (en) * 1987-02-24 1989-12-05 International Business Machines Corporation Plasma reactor having segmented electrodes
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
JP2674488B2 (ja) * 1993-12-01 1997-11-12 日本電気株式会社 ドライエッチング室のクリーニング方法
US5532447A (en) * 1993-12-06 1996-07-02 Aluminum Company Of America Method of cleaning an aluminum surface by plasma treatment
KR0183912B1 (ko) * 1996-08-08 1999-05-01 김광호 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
CN104051246B (zh) * 2013-03-13 2017-02-08 中芯国际集成电路制造(上海)有限公司 一种提高高压栅氧可靠性的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5291650A (en) * 1976-01-29 1977-08-02 Toshiba Corp Continuous gas plasma etching apparatus
US4252595A (en) * 1976-01-29 1981-02-24 Tokyo Shibaura Electric Co., Ltd. Etching apparatus using a plasma
CA1059882A (en) * 1976-08-16 1979-08-07 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
US4057460A (en) * 1976-11-22 1977-11-08 Data General Corporation Plasma etching process
DE2730819A1 (de) * 1977-07-07 1979-01-25 Siemens Ag Plasma-aetzverfahren
US4256534A (en) * 1978-07-31 1981-03-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
JPS561533A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Method of photoetching
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213429A (ja) * 1982-06-07 1983-12-12 Nec Corp ドライエツチング装置
JPS593927A (ja) * 1982-06-29 1984-01-10 Fujitsu Ltd 薄膜のエツチング方法
JPS60174242U (ja) * 1984-04-17 1985-11-19 株式会社日立国際電気 リアクテイブイオンエツチング装置
JPS61133316A (ja) * 1984-11-30 1986-06-20 Tokuda Seisakusho Ltd 熱処理装置
JPS61133314A (ja) * 1984-11-30 1986-06-20 Tokuda Seisakusho Ltd 熱処理装置
JPH0346546B2 (ja) * 1984-11-30 1991-07-16 Tokuda Seisakusho

Also Published As

Publication number Publication date
EP0047002A3 (en) 1982-03-24
DD207927A5 (de) 1984-03-21
US4442338A (en) 1984-04-10
JPS6353268B2 (ja) 1988-10-21
EP0047002B1 (en) 1984-04-11
DE3163085D1 (en) 1984-05-17
EP0047002A2 (en) 1982-03-10

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