|
JPS5524454A
(en)
*
|
1978-08-08 |
1980-02-21 |
Nec Corp |
Insulating gate type field effect transistor
|
|
JPS5530876A
(en)
*
|
1978-08-28 |
1980-03-04 |
Fuji Electric Co Ltd |
Semiconductor device
|
|
JPS5633899A
(en)
*
|
1979-08-29 |
1981-04-04 |
Cho Lsi Gijutsu Kenkyu Kumiai |
Method of forming multilayer wire
|
|
JPS56130948A
(en)
*
|
1980-03-18 |
1981-10-14 |
Nec Corp |
Semiconductor device
|
|
JPS5720452A
(en)
*
|
1980-07-11 |
1982-02-02 |
Matsushita Electric Ind Co Ltd |
Forming method for multilayer wiring
|
|
JPS5748249A
(en)
*
|
1980-09-08 |
1982-03-19 |
Nec Corp |
Semiconductor device
|
|
JPS57149751A
(en)
*
|
1981-03-11 |
1982-09-16 |
Nec Corp |
Semiconductor device
|
|
JPS58500680A
(ja)
*
|
1981-05-04 |
1983-04-28 |
モトロ−ラ・インコ−ポレ−テツド |
低抵抗合成金属導体を具えた半導体デバイスおよびその製造方法
|
|
JPS57208161A
(en)
*
|
1981-06-18 |
1982-12-21 |
Fujitsu Ltd |
Semiconductor device
|
|
JPS57208160A
(en)
*
|
1981-06-18 |
1982-12-21 |
Fujitsu Ltd |
Semiconductor device
|
|
JPS6037745A
(ja)
*
|
1983-08-10 |
1985-02-27 |
Seiko Epson Corp |
半導体装置
|
|
JPS6154648A
(ja)
*
|
1984-08-24 |
1986-03-18 |
Mitsubishi Electric Corp |
半導体装置の製造方法
|
|
IT1213261B
(it)
*
|
1984-12-20 |
1989-12-14 |
Sgs Thomson Microelectronics |
Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
|
|
JPS61159750A
(ja)
*
|
1984-12-31 |
1986-07-19 |
Sony Corp |
半導体装置及びその製造方法
|
|
JPS61183942A
(ja)
*
|
1985-02-08 |
1986-08-16 |
Fujitsu Ltd |
半導体装置の製造方法
|
|
JPH069220B2
(ja)
*
|
1985-09-10 |
1994-02-02 |
松下電器産業株式会社 |
多層配線
|
|
JPS62118546A
(ja)
*
|
1985-11-19 |
1987-05-29 |
Mitsubishi Electric Corp |
半導体装置の製造方法
|
|
JPS63198357A
(ja)
*
|
1987-02-13 |
1988-08-17 |
Nec Corp |
半導体装置
|
|
JPS6465856A
(en)
*
|
1987-09-05 |
1989-03-13 |
Fujitsu Ltd |
Semiconductor device and manufacture thereof
|