JPS5736875A - Semiconductor photoelectric converter - Google Patents
Semiconductor photoelectric converterInfo
- Publication number
- JPS5736875A JPS5736875A JP11133980A JP11133980A JPS5736875A JP S5736875 A JPS5736875 A JP S5736875A JP 11133980 A JP11133980 A JP 11133980A JP 11133980 A JP11133980 A JP 11133980A JP S5736875 A JPS5736875 A JP S5736875A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor
- semiconductor region
- photoelectric converter
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11133980A JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11133980A JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5736875A true JPS5736875A (en) | 1982-02-27 |
| JPS6244712B2 JPS6244712B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-09-22 |
Family
ID=14558682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11133980A Granted JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5736875A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60248398A (ja) * | 1984-04-07 | 1985-12-09 | コルブス ゲ−エムベ−ハ− ウント コムパニ カ−ゲ− | 製本機の運搬手段への製本ブロツクの移送方法および装置 |
| JP2009065858A (ja) * | 2007-09-11 | 2009-04-02 | Daiwa Seiko Inc | 魚釣用リール |
-
1980
- 1980-08-13 JP JP11133980A patent/JPS5736875A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60248398A (ja) * | 1984-04-07 | 1985-12-09 | コルブス ゲ−エムベ−ハ− ウント コムパニ カ−ゲ− | 製本機の運搬手段への製本ブロツクの移送方法および装置 |
| JP2009065858A (ja) * | 2007-09-11 | 2009-04-02 | Daiwa Seiko Inc | 魚釣用リール |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244712B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-09-22 |
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