JPS6244712B2 - - Google Patents
Info
- Publication number
- JPS6244712B2 JPS6244712B2 JP55111339A JP11133980A JPS6244712B2 JP S6244712 B2 JPS6244712 B2 JP S6244712B2 JP 55111339 A JP55111339 A JP 55111339A JP 11133980 A JP11133980 A JP 11133980A JP S6244712 B2 JPS6244712 B2 JP S6244712B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- photoelectric conversion
- conversion device
- conductivity type
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11133980A JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11133980A JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5736875A JPS5736875A (en) | 1982-02-27 |
JPS6244712B2 true JPS6244712B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-09-22 |
Family
ID=14558682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11133980A Granted JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5736875A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3413222C2 (de) * | 1984-04-07 | 1995-02-09 | Kolbus Gmbh & Co Kg | Verfahren zum Überführen von Buchblocks in das Transportmittel einer Buchbindemaschine und Vorrichtung zur Durchführung des Verfahrens |
JP2009065858A (ja) * | 2007-09-11 | 2009-04-02 | Daiwa Seiko Inc | 魚釣用リール |
-
1980
- 1980-08-13 JP JP11133980A patent/JPS5736875A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5736875A (en) | 1982-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3016858B2 (ja) | シリコン層を備えた半導体デバイス | |
JPH022692A (ja) | 赤外線検知用溝付きショットキーバリアホトダイオード | |
US4144094A (en) | Radiation responsive current generating cell and method of forming same | |
JP3646940B2 (ja) | 太陽電池 | |
JPH03185879A (ja) | 光電変換装置 | |
US4383267A (en) | Avalanche photodiode and method of making same | |
JPS5812377A (ja) | 高速度光電性検出素子およびその製造方法 | |
US4525593A (en) | Inverted, optically enhanced solar cell | |
JP2002026366A (ja) | 半導体装置 | |
KR20040049123A (ko) | 핀 구조의 포토다이오드 | |
JPS6244712B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS6231834B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPH0818091A (ja) | 複数のフォトダイオードを有する半導体光電変換素子 | |
US4157560A (en) | Photo detector cell | |
JP2770810B2 (ja) | 受光素子 | |
KR100237183B1 (ko) | 금속-반도체 광소자 | |
JPH01216581A (ja) | 半導体装置 | |
GB2149572A (en) | Semiconductor diode lasers | |
JP2583032B2 (ja) | 受光素子 | |
JPS5913724B2 (ja) | 光制御回路 | |
JPH03132080A (ja) | 光起電力装置 | |
JPS61185979A (ja) | 集積型光電変換素子 | |
JPS6140148B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS6242465A (ja) | 光電変換装置 | |
JPH0697490A (ja) | 面型光半導体素子 |