JPS5731135A - Collective forming method for metallic pattern - Google Patents

Collective forming method for metallic pattern

Info

Publication number
JPS5731135A
JPS5731135A JP10506780A JP10506780A JPS5731135A JP S5731135 A JPS5731135 A JP S5731135A JP 10506780 A JP10506780 A JP 10506780A JP 10506780 A JP10506780 A JP 10506780A JP S5731135 A JPS5731135 A JP S5731135A
Authority
JP
Japan
Prior art keywords
pattern
resist
stages
film
difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10506780A
Other languages
English (en)
Other versions
JPS6239817B2 (ja
Inventor
Akira Ozawa
Toshiro Ono
Misao Sekimoto
Iwao Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10506780A priority Critical patent/JPS5731135A/ja
Publication of JPS5731135A publication Critical patent/JPS5731135A/ja
Publication of JPS6239817B2 publication Critical patent/JPS6239817B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10506780A 1980-08-01 1980-08-01 Collective forming method for metallic pattern Granted JPS5731135A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10506780A JPS5731135A (en) 1980-08-01 1980-08-01 Collective forming method for metallic pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10506780A JPS5731135A (en) 1980-08-01 1980-08-01 Collective forming method for metallic pattern

Publications (2)

Publication Number Publication Date
JPS5731135A true JPS5731135A (en) 1982-02-19
JPS6239817B2 JPS6239817B2 (ja) 1987-08-25

Family

ID=14397606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10506780A Granted JPS5731135A (en) 1980-08-01 1980-08-01 Collective forming method for metallic pattern

Country Status (1)

Country Link
JP (1) JPS5731135A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986051A (ja) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp Ｘ線露光用マスクの製造方法
JPS5989422A (ja) * 1982-11-15 1984-05-23 Mitsubishi Electric Corp Ｘ線マスクの製造方法
JPS5992531A (ja) * 1982-11-17 1984-05-28 Mitsubishi Electric Corp Ｘ線露光用マスク
JPS6247045A (ja) * 1985-08-20 1987-02-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ポリイミド組成物およびパタ−ンを有する膜の形成法
US4865952A (en) * 1986-09-20 1989-09-12 Mitsubishi Denki Kabushiki Kaisha Method of forming a T-shaped control electrode through an X-ray mask
JPH0626246U (ja) * 1982-09-01 1994-04-08 エヌ・ベー・フィリップス・フルーイランペンファブリケン Ｘ線リトグラフィによりパターンをラッカー層に形成するマスク
JPH0851056A (ja) * 1994-08-08 1996-02-20 Nippon Telegr & Teleph Corp <Ntt> Ｘ線露光用マスクの製造方法
JP2002139842A (ja) * 2000-11-01 2002-05-17 Fujitsu Ltd パターン形成方法と半導体装置
JP2008153390A (ja) * 2006-12-15 2008-07-03 Toyota Motor Corp 不純物導入領域を形成する方法およびシステム

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0626246U (ja) * 1982-09-01 1994-04-08 エヌ・ベー・フィリップス・フルーイランペンファブリケン Ｘ線リトグラフィによりパターンをラッカー層に形成するマスク
JPS5986051A (ja) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp Ｘ線露光用マスクの製造方法
JPS5989422A (ja) * 1982-11-15 1984-05-23 Mitsubishi Electric Corp Ｘ線マスクの製造方法
JPS5992531A (ja) * 1982-11-17 1984-05-28 Mitsubishi Electric Corp Ｘ線露光用マスク
JPS6247045A (ja) * 1985-08-20 1987-02-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ポリイミド組成物およびパタ−ンを有する膜の形成法
JPH0511613B2 (ja) * 1985-08-20 1993-02-16 Intaanashonaru Bijinesu Mashiinzu Corp
US4865952A (en) * 1986-09-20 1989-09-12 Mitsubishi Denki Kabushiki Kaisha Method of forming a T-shaped control electrode through an X-ray mask
US4895779A (en) * 1986-09-20 1990-01-23 Mitsubishi Denki Kabushiki Kaisha Method of forming a T shaped control electrode through an X-ray mask
JPH0851056A (ja) * 1994-08-08 1996-02-20 Nippon Telegr & Teleph Corp <Ntt> Ｘ線露光用マスクの製造方法
JP2002139842A (ja) * 2000-11-01 2002-05-17 Fujitsu Ltd パターン形成方法と半導体装置
JP4622084B2 (ja) * 2000-11-01 2011-02-02 富士通株式会社 パターン形成方法
JP2008153390A (ja) * 2006-12-15 2008-07-03 Toyota Motor Corp 不純物導入領域を形成する方法およびシステム

Also Published As

Publication number Publication date
JPS6239817B2 (ja) 1987-08-25

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