JPS5726472A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5726472A
JPS5726472A JP10181680A JP10181680A JPS5726472A JP S5726472 A JPS5726472 A JP S5726472A JP 10181680 A JP10181680 A JP 10181680A JP 10181680 A JP10181680 A JP 10181680A JP S5726472 A JPS5726472 A JP S5726472A
Authority
JP
Japan
Prior art keywords
layer
electrode
electron
shielding
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10181680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6353705B2 (enExample
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10181680A priority Critical patent/JPS5726472A/ja
Publication of JPS5726472A publication Critical patent/JPS5726472A/ja
Publication of JPS6353705B2 publication Critical patent/JPS6353705B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP10181680A 1980-07-24 1980-07-24 Semiconductor device Granted JPS5726472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10181680A JPS5726472A (en) 1980-07-24 1980-07-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10181680A JPS5726472A (en) 1980-07-24 1980-07-24 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5726472A true JPS5726472A (en) 1982-02-12
JPS6353705B2 JPS6353705B2 (enExample) 1988-10-25

Family

ID=14310642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10181680A Granted JPS5726472A (en) 1980-07-24 1980-07-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726472A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041262A (ja) * 1983-08-16 1985-03-04 Oki Electric Ind Co Ltd 半導体装置
JPS60223171A (ja) * 1984-04-19 1985-11-07 Nec Corp 電界効果トランジスタ
JPS60231366A (ja) * 1984-04-28 1985-11-16 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS6123364A (ja) * 1984-07-11 1986-01-31 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS6143480A (ja) * 1984-08-08 1986-03-03 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS6196769A (ja) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS61280674A (ja) * 1985-06-06 1986-12-11 Nec Corp 半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041262A (ja) * 1983-08-16 1985-03-04 Oki Electric Ind Co Ltd 半導体装置
JPS60223171A (ja) * 1984-04-19 1985-11-07 Nec Corp 電界効果トランジスタ
JPS60231366A (ja) * 1984-04-28 1985-11-16 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS6123364A (ja) * 1984-07-11 1986-01-31 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS6143480A (ja) * 1984-08-08 1986-03-03 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS6196769A (ja) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS61280674A (ja) * 1985-06-06 1986-12-11 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS6353705B2 (enExample) 1988-10-25

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