JPS6353705B2 - - Google Patents
Info
- Publication number
- JPS6353705B2 JPS6353705B2 JP55101816A JP10181680A JPS6353705B2 JP S6353705 B2 JPS6353705 B2 JP S6353705B2 JP 55101816 A JP55101816 A JP 55101816A JP 10181680 A JP10181680 A JP 10181680A JP S6353705 B2 JPS6353705 B2 JP S6353705B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electron
- semiconductor
- control electrode
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10181680A JPS5726472A (en) | 1980-07-24 | 1980-07-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10181680A JPS5726472A (en) | 1980-07-24 | 1980-07-24 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5726472A JPS5726472A (en) | 1982-02-12 |
| JPS6353705B2 true JPS6353705B2 (enExample) | 1988-10-25 |
Family
ID=14310642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10181680A Granted JPS5726472A (en) | 1980-07-24 | 1980-07-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5726472A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041262A (ja) * | 1983-08-16 | 1985-03-04 | Oki Electric Ind Co Ltd | 半導体装置 |
| JPH0783107B2 (ja) * | 1984-04-19 | 1995-09-06 | 日本電気株式会社 | 電界効果トランジスタ |
| JPS60231366A (ja) * | 1984-04-28 | 1985-11-16 | Agency Of Ind Science & Technol | 電界効果トランジスタ |
| JPS6123364A (ja) * | 1984-07-11 | 1986-01-31 | Agency Of Ind Science & Technol | 電界効果トランジスタ |
| JPS6143480A (ja) * | 1984-08-08 | 1986-03-03 | Agency Of Ind Science & Technol | 電界効果トランジスタ |
| JPS6196769A (ja) * | 1984-10-17 | 1986-05-15 | Agency Of Ind Science & Technol | 電界効果トランジスタ |
| JPS61280674A (ja) * | 1985-06-06 | 1986-12-11 | Nec Corp | 半導体装置 |
-
1980
- 1980-07-24 JP JP10181680A patent/JPS5726472A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5726472A (en) | 1982-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9136363B2 (en) | Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the same | |
| JPH0435904B2 (enExample) | ||
| CN105280502A (zh) | 热电子过激励隧道场效应晶体管及其制造和操作方法 | |
| JP2011049599A (ja) | 電界効果トランジスタ | |
| US10896974B2 (en) | Method of fabricating semiconductor device | |
| JP3021154B2 (ja) | ヘテロ接合電界効果トランジスタおよびその製造方法 | |
| JPH024140B2 (enExample) | ||
| JPS6353705B2 (enExample) | ||
| JPH084138B2 (ja) | 半導体装置 | |
| KR101834660B1 (ko) | 수직 터널링 전계효과 트랜지스터 및 이의 제조방법 | |
| CN108352401A (zh) | 隧穿场效应晶体管及其制备方法 | |
| KR102273935B1 (ko) | 음성 트랜스 컨덕턴스 기반의 터널링 트랜지스터 | |
| JPS639388B2 (enExample) | ||
| CN108369954B (zh) | 隧穿场效应晶体管及其制作方法 | |
| WO2016029711A1 (zh) | 一种隧穿场效应晶体管及其制作方法 | |
| JPH06163929A (ja) | バンド間トンネル電界効果トランジスタ | |
| EP0268386A2 (en) | Tunnelling transistor | |
| JP3054216B2 (ja) | 半導体装置 | |
| JPH09107090A (ja) | 半導体装置 | |
| KR102451562B1 (ko) | 터널링 전계 효과 트랜지스터 및 이를 포함하는 반도체 장치 | |
| JPH0328821B2 (enExample) | ||
| JP2553673B2 (ja) | 電界効果トランジスタ | |
| US11621340B2 (en) | Field-effect transistor structure and fabrication method | |
| JP2728765B2 (ja) | 化合物半導体電界効果トランジスタ | |
| JPH10135359A (ja) | 不揮発性トランジスタ |