JPS57211274A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57211274A JPS57211274A JP9719181A JP9719181A JPS57211274A JP S57211274 A JPS57211274 A JP S57211274A JP 9719181 A JP9719181 A JP 9719181A JP 9719181 A JP9719181 A JP 9719181A JP S57211274 A JPS57211274 A JP S57211274A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- areas
- electrode
- elements
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the maximum yield of products by forming elements for a test such as a plurality of transistors or diodes with aluminum electrodes, the ratios of aluminum areas to contacting areas thereof are changed variously, to one part of a semiconductor substrate to which elements, such as transistors, the IC, etc. are provided. CONSTITUTION:MOS transistor elements 1a, 1b for the test are formed to one part of an N type semiconductor substrate 11 apart from an internal element. Here, the element 1a is formed by a P type source region 12, a drain region 13, a gate electrode 14, an aluminum source electrode 4 and a drain electrode 5. The element 1b is also formed by a P type source region 22, a drain region 23, a gate electrode 24, an aluminum source electrode 6 and a drain electrode 7, and the surface exposed is coated with an insulating oxide film 3. In this constitution, the areas of aluminum itself are the same, but the areas of openings shaped to the film 3 are changed, the electrodes 4, 5, 6, 7 are attached, and structure having the most excellent electric characteristics is obtained and used as a reference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9719181A JPH0230571B2 (en) | 1981-06-23 | 1981-06-23 | HANDOTAISOCHI |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9719181A JPH0230571B2 (en) | 1981-06-23 | 1981-06-23 | HANDOTAISOCHI |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57211274A true JPS57211274A (en) | 1982-12-25 |
| JPH0230571B2 JPH0230571B2 (en) | 1990-07-06 |
Family
ID=14185683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9719181A Expired - Lifetime JPH0230571B2 (en) | 1981-06-23 | 1981-06-23 | HANDOTAISOCHI |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0230571B2 (en) |
-
1981
- 1981-06-23 JP JP9719181A patent/JPH0230571B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0230571B2 (en) | 1990-07-06 |
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