JPS56138950A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56138950A
JPS56138950A JP4260980A JP4260980A JPS56138950A JP S56138950 A JPS56138950 A JP S56138950A JP 4260980 A JP4260980 A JP 4260980A JP 4260980 A JP4260980 A JP 4260980A JP S56138950 A JPS56138950 A JP S56138950A
Authority
JP
Japan
Prior art keywords
layer
film
region
oxide film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4260980A
Other languages
Japanese (ja)
Inventor
Toru Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4260980A priority Critical patent/JPS56138950A/en
Publication of JPS56138950A publication Critical patent/JPS56138950A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the improper shortcircuit with shallow junction in a semiconductor device by covering a part of a semiconductor substrate having a different conductivite type region with a polycrystalline silicon layer, covering a part thereon with a nitride film, and contacting the conductive substance with the polycrystalline layer to extend on the nitride film. CONSTITUTION:After an oxide film 2 is selectively formed on an N type Si substrate 1, impurity is diffused from the exposed part of the substrate 1, and the source and drain region 3 of P-channel MOS transistor having a junction depth of 0.2-1mum is formed. A polycrystalline Si layer 4 of 500-1,000Angstrom is formed thereon, and a nitride film layer 5 of the same thickness is further formed thereon. After etching the film 5 selectively, the film 2 of the gate and a part 6 of the layer 4 on the region 2 are removed, and a gate oxide film 7 is formed thereon. The gate oxide film on the region 3 is removed, and electrodes 8 of S, D, G and wires are formed by evaporating aluminum. Thus, it can prevent the improper shortcircuit with electrode material in shallow junction without increasing the number of etching steps.
JP4260980A 1980-04-01 1980-04-01 Semiconductor device Pending JPS56138950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4260980A JPS56138950A (en) 1980-04-01 1980-04-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4260980A JPS56138950A (en) 1980-04-01 1980-04-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56138950A true JPS56138950A (en) 1981-10-29

Family

ID=12640765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4260980A Pending JPS56138950A (en) 1980-04-01 1980-04-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56138950A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578873A (en) * 1994-10-12 1996-11-26 Micron Technology, Inc. Integrated circuitry having a thin film polysilicon layer in ohmic contact with a conductive layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578873A (en) * 1994-10-12 1996-11-26 Micron Technology, Inc. Integrated circuitry having a thin film polysilicon layer in ohmic contact with a conductive layer
US5729055A (en) * 1994-10-12 1998-03-17 Micron Technology, Inc. Integrated circuitry having a thin film polysilicon layer in ohmic contact with a conductive layer
US5909631A (en) * 1994-10-12 1999-06-01 Micron Technology, Inc. Method of making ohmic contact between a thin film polysilicon layer and a subsequently provided conductive layer and integrated circuitry
US5930662A (en) * 1994-10-12 1999-07-27 Micron Technology, Inc. Method of making ohmic contact between a thin film polysilicon layer and a subsequently provided conductive layer and integrated circuitry

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