JPS57211143A - Formation of micropattern - Google Patents
Formation of micropatternInfo
- Publication number
- JPS57211143A JPS57211143A JP9591681A JP9591681A JPS57211143A JP S57211143 A JPS57211143 A JP S57211143A JP 9591681 A JP9591681 A JP 9591681A JP 9591681 A JP9591681 A JP 9591681A JP S57211143 A JPS57211143 A JP S57211143A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- resist
- silylating
- permitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229920000058 polyacrylate Polymers 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9591681A JPS57211143A (en) | 1981-06-23 | 1981-06-23 | Formation of micropattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9591681A JPS57211143A (en) | 1981-06-23 | 1981-06-23 | Formation of micropattern |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57211143A true JPS57211143A (en) | 1982-12-24 |
JPH0243172B2 JPH0243172B2 (enrdf_load_stackoverflow) | 1990-09-27 |
Family
ID=14150597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9591681A Granted JPS57211143A (en) | 1981-06-23 | 1981-06-23 | Formation of micropattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57211143A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61248035A (ja) * | 1985-04-26 | 1986-11-05 | Nippon Zeon Co Ltd | 密着性の改良されたホトレジスト組成物 |
JPS62137830A (ja) * | 1985-12-12 | 1987-06-20 | Mitsubishi Electric Corp | 微細パタ−ン形成方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53135621A (en) * | 1977-05-02 | 1978-11-27 | Hitachi Ltd | Photosensitive composition |
JPS5427369A (en) * | 1977-08-01 | 1979-03-01 | Hitachi Ltd | Pattern formation method |
JPS5449072A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Developing method for resist film |
JPS5460571A (en) * | 1977-10-24 | 1979-05-16 | Cho Lsi Gijutsu Kenkyu Kumiai | Dry developing and etching method |
JPS57157241A (en) * | 1981-03-25 | 1982-09-28 | Oki Electric Ind Co Ltd | Formation of resist material and its pattern |
JPS57202534A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Negative type resist composition |
JPS57202535A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of negative resist pattern |
JPS57202533A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of pattern |
JPS57202532A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of pattern |
JPS57202537A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Resist composition for dry development |
JPS57205736A (en) * | 1981-04-22 | 1982-12-16 | Western Electric Co | Solid state device produced by plasm development of resist |
-
1981
- 1981-06-23 JP JP9591681A patent/JPS57211143A/ja active Granted
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53135621A (en) * | 1977-05-02 | 1978-11-27 | Hitachi Ltd | Photosensitive composition |
JPS5427369A (en) * | 1977-08-01 | 1979-03-01 | Hitachi Ltd | Pattern formation method |
JPS5449072A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Developing method for resist film |
JPS5460571A (en) * | 1977-10-24 | 1979-05-16 | Cho Lsi Gijutsu Kenkyu Kumiai | Dry developing and etching method |
JPS57157241A (en) * | 1981-03-25 | 1982-09-28 | Oki Electric Ind Co Ltd | Formation of resist material and its pattern |
JPS57205736A (en) * | 1981-04-22 | 1982-12-16 | Western Electric Co | Solid state device produced by plasm development of resist |
JPS57202534A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Negative type resist composition |
JPS57202535A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of negative resist pattern |
JPS57202533A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of pattern |
JPS57202532A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of pattern |
JPS57202537A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Resist composition for dry development |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61248035A (ja) * | 1985-04-26 | 1986-11-05 | Nippon Zeon Co Ltd | 密着性の改良されたホトレジスト組成物 |
JPS62137830A (ja) * | 1985-12-12 | 1987-06-20 | Mitsubishi Electric Corp | 微細パタ−ン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0243172B2 (enrdf_load_stackoverflow) | 1990-09-27 |
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