JPS57208148A - Manufacture of mesa type semiconductor device - Google Patents
Manufacture of mesa type semiconductor deviceInfo
- Publication number
- JPS57208148A JPS57208148A JP56093148A JP9314881A JPS57208148A JP S57208148 A JPS57208148 A JP S57208148A JP 56093148 A JP56093148 A JP 56093148A JP 9314881 A JP9314881 A JP 9314881A JP S57208148 A JPS57208148 A JP S57208148A
- Authority
- JP
- Japan
- Prior art keywords
- film
- glass
- films
- forming
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent the external contamination of a semiconductor device by formig a mesa groove with a photoresist film and an insulating film as masks, forming by an electrophoresis a glass protective film on the mesa groove part and forming a glass protective film on the film with the resist film as a mask. CONSTITUTION:Photoresist films 9 are covered on both side surfaces of a semiconductor substrate, and mesa groove windows 10a, 10b are opened at insulating films 6. Then the windows 10a, 10b are chemically etched with the films 9, 6 as masks to respectively form mesa grooves 11a, 11b through P-N junctions 4, 5 and to expose the P-N junctions 4, 5, 8. Subsequently, glass powder is selectively coated by an electrophoresis on the grooves 11a, 11b, thereby forming a glass particle layer. Then, a substrate is heated and molten to form the first glass protective films 12, 13. Then, a photoresist film 14 is newly covered on one main surface of the substrate, and the second glass protective film 16 is selectively formed by a screen printing method with the film as a mask. The melting temperatures of the glass material of the first and second protective films are selected at points different from each other.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56093148A JPS57208148A (en) | 1981-06-17 | 1981-06-17 | Manufacture of mesa type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56093148A JPS57208148A (en) | 1981-06-17 | 1981-06-17 | Manufacture of mesa type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57208148A true JPS57208148A (en) | 1982-12-21 |
Family
ID=14074442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56093148A Pending JPS57208148A (en) | 1981-06-17 | 1981-06-17 | Manufacture of mesa type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57208148A (en) |
-
1981
- 1981-06-17 JP JP56093148A patent/JPS57208148A/en active Pending
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