JPS6442181A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To protect the surfaces of mesa semiconductor crystal layers from contamination by photoresist films by a method wherein an insulating film is formed over the whole surface of the semiconductor crystal layers before the photoresist films is formed as a mask for mesa-etching of the semiconductor crystal layers which form a P-N junction. CONSTITUTION:After semiconductor crystal layers 12 and 13 which form a P-N junction are formed on a substrate 11, an insulating film 14 is formed over the whole surface of the crystal layers 12 and 13. After photoresist films 15 of required patterns are formed on the insulating film 14, the crystal layers 12 and 13 are etched with the photoresist films 15 as masks so as to expose the surface of the substrate 11. After metal films 16 are formed on the substrate to connect the isolated semiconductor crystal layers to each other with the metal films 16, anode sulfide films or anode oxide films 17 are formed on the side walls of the crystal layers and the photoresist films 15 are removed and, at the same time, the metal films 16 and the insulating films 17 on the resist films 15 are removed. With this constitution, the mesa semiconductor crystal layers with a P-N junction of an infrared sensor are protected from contamination caused by the photoresist films so that a high quality semiconductor device can be obtained.