JPS57207348A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57207348A
JPS57207348A JP9245381A JP9245381A JPS57207348A JP S57207348 A JPS57207348 A JP S57207348A JP 9245381 A JP9245381 A JP 9245381A JP 9245381 A JP9245381 A JP 9245381A JP S57207348 A JPS57207348 A JP S57207348A
Authority
JP
Japan
Prior art keywords
layer
substrate
etching
constitution
withstand voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9245381A
Other languages
English (en)
Other versions
JPS6360534B2 (ja
Inventor
Akira Takei
Yuji Furumura
Yoshihiko Higa
Takashi Mitsuida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9245381A priority Critical patent/JPS57207348A/ja
Publication of JPS57207348A publication Critical patent/JPS57207348A/ja
Publication of JPS6360534B2 publication Critical patent/JPS6360534B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP9245381A 1981-06-16 1981-06-16 Manufacture of semiconductor device Granted JPS57207348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9245381A JPS57207348A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9245381A JPS57207348A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57207348A true JPS57207348A (en) 1982-12-20
JPS6360534B2 JPS6360534B2 (ja) 1988-11-24

Family

ID=14054808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9245381A Granted JPS57207348A (en) 1981-06-16 1981-06-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57207348A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61228653A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体装置の製造方法
JPS62290146A (ja) * 1986-06-09 1987-12-17 Toshiba Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61228653A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体装置の製造方法
JPS62290146A (ja) * 1986-06-09 1987-12-17 Toshiba Corp 半導体装置の製造方法
JPH0565058B2 (ja) * 1986-06-09 1993-09-16 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6360534B2 (ja) 1988-11-24

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