JPS57205736A - Solid state device produced by plasm development of resist - Google Patents

Solid state device produced by plasm development of resist

Info

Publication number
JPS57205736A
JPS57205736A JP57066401A JP6640182A JPS57205736A JP S57205736 A JPS57205736 A JP S57205736A JP 57066401 A JP57066401 A JP 57066401A JP 6640182 A JP6640182 A JP 6640182A JP S57205736 A JPS57205736 A JP S57205736A
Authority
JP
Japan
Prior art keywords
plasm
resist
development
solid state
state device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57066401A
Other languages
English (en)
Inventor
Niyuuton Teiraa Garii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS57205736A publication Critical patent/JPS57205736A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process
JP57066401A 1981-04-22 1982-04-22 Solid state device produced by plasm development of resist Pending JPS57205736A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/256,604 US4396704A (en) 1981-04-22 1981-04-22 Solid state devices produced by organometallic plasma developed resists

Publications (1)

Publication Number Publication Date
JPS57205736A true JPS57205736A (en) 1982-12-16

Family

ID=22972869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57066401A Pending JPS57205736A (en) 1981-04-22 1982-04-22 Solid state device produced by plasm development of resist

Country Status (6)

Country Link
US (1) US4396704A (ja)
JP (1) JPS57205736A (ja)
CA (1) CA1175279A (ja)
DE (1) DE3215082A1 (ja)
GB (1) GB2097143B (ja)
IT (1) IT1150865B (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPS5891632A (ja) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
JPS60229026A (ja) * 1984-03-02 1985-11-14 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− 電子デバイスの製造方法
JPS60241225A (ja) * 1984-05-14 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 陰画レジスト像を生成する方法
JPS61107346A (ja) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム フォトレジスト層中にネガ図形を形成する方法
JPS61219034A (ja) * 1985-03-19 1986-09-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 耐プラズマ性重合体物質の製法
JP2020002121A (ja) * 2018-05-07 2020-01-09 達興材料股▲ふん▼有限公司 シリコン含有化合物、これを用いる液晶組成物および液晶ディスプレイ
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500628A (en) * 1981-04-22 1985-02-19 At&T Bell Laboratories Process of making solid state devices using silicon containing organometallic plasma developed resists
JPS57202534A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Negative type resist composition
EP0090615B1 (en) * 1982-03-26 1989-01-11 Hitachi, Ltd. Method for forming fine resist patterns
DE3231457A1 (de) * 1982-08-24 1984-03-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von strukturen fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
US4517276A (en) * 1982-11-29 1985-05-14 Varian Associates, Inc. Metal-containing organic photoresists
US5215867A (en) * 1983-09-16 1993-06-01 At&T Bell Laboratories Method with gas functionalized plasma developed layer
US4596761A (en) * 1983-11-02 1986-06-24 Hughes Aircraft Company Graft polymerized SiO2 lithographic masks
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
JPS60224136A (ja) * 1984-04-23 1985-11-08 Matsushita Electric Ind Co Ltd 光学記録材料および記録方法
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4702792A (en) * 1985-10-28 1987-10-27 International Business Machines Corporation Method of forming fine conductive lines, patterns and connectors
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US4761298A (en) * 1987-05-06 1988-08-02 The United States Of America As Represented By The Secretary Of The Army Method of precisely adjusting the frequency of a piezoelectric resonator
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US5108875A (en) * 1988-07-29 1992-04-28 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US5079131A (en) * 1988-08-29 1992-01-07 Shipley Company Inc. Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
US5094936A (en) * 1988-09-16 1992-03-10 Texas Instruments Incorporated High pressure photoresist silylation process and apparatus
US5213917A (en) * 1989-05-18 1993-05-25 Shipley Company Inc. Plasma processing with metal mask integration
US5053318A (en) * 1989-05-18 1991-10-01 Shipley Company Inc. Plasma processing with metal mask integration
US5275913A (en) * 1990-05-08 1994-01-04 Industrial Technology Research Institute Method for preparing resist patterns utilizing solvent development with subsequent resist pattern transfer, via a photo-hardening liquid adhesive, to a receiver substrate and oxygen reactive ion etching
US5304453A (en) * 1991-07-11 1994-04-19 Industrial Technology Research Institute Method for preparing resist patterns through image layer transfer to a receiver substrate, via a photo-hardening organic liquid adhesive, with subsequent oxygen reactive ion etching
US5262392A (en) * 1991-07-15 1993-11-16 Eastman Kodak Company Method for patterning metallo-organic percursor film and method for producing a patterned ceramic film and film products
US5366852A (en) * 1992-09-21 1994-11-22 Shipley Company, Inc. Methods for treating photoresists
EP0624827A1 (de) * 1993-05-12 1994-11-17 Ciba-Geigy Ag Verfahren zur Herstellung von Mikrostrukturen
JP2001234356A (ja) * 2000-02-24 2001-08-31 Seiko Epson Corp 膜の製造方法及びこれにより得られる膜
JP3697426B2 (ja) * 2002-04-24 2005-09-21 株式会社東芝 パターン形成方法および半導体装置の製造方法
US6737283B2 (en) 2002-08-29 2004-05-18 Micron Technology, Inc. Method to isolate device layer edges through mechanical spacing
US7704670B2 (en) 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US8524441B2 (en) 2007-02-27 2013-09-03 Az Electronic Materials Usa Corp. Silicon-based antireflective coating compositions

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3809686A (en) * 1970-03-19 1974-05-07 Bell Telephone Labor Inc Transparent media capable of photoinduced refractive index changes and their application to light guides and the like
JPS5146001B2 (ja) * 1971-09-20 1976-12-07
US3899338A (en) * 1972-02-09 1975-08-12 Horizons Inc Photosensitive material suitable for use as a photoresist
US4061829A (en) * 1976-04-26 1977-12-06 Bell Telephone Laboratories, Incorporated Negative resist for X-ray and electron beam lithography and method of using same
FR2375623A1 (fr) * 1976-06-23 1978-07-21 Commissariat Energie Atomique Nouveaux films photosensibles utilisables en microgravure
US4332879A (en) * 1978-12-01 1982-06-01 Hughes Aircraft Company Process for depositing a film of controlled composition using a metallo-organic photoresist
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4278753A (en) * 1980-02-25 1981-07-14 Horizons Research Incorporated Plasma developable photoresist composition with polyvinyl formal binder
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
DE3169660D1 (en) * 1980-06-25 1985-05-09 Hitachi Ltd Process for forming metallic images
US4329418A (en) * 1980-11-14 1982-05-11 Lord Corporation Organometallic semiconductor devices

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPH0243172B2 (ja) * 1981-06-23 1990-09-27
JPS5891632A (ja) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
JPS60229026A (ja) * 1984-03-02 1985-11-14 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− 電子デバイスの製造方法
JPS60241225A (ja) * 1984-05-14 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 陰画レジスト像を生成する方法
JPH0456978B2 (ja) * 1984-05-14 1992-09-10 Intaanashonaru Bijinesu Mashiinzu Corp
JPS61107346A (ja) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム フォトレジスト層中にネガ図形を形成する方法
JPH0220869A (ja) * 1984-10-26 1990-01-24 Ucb Sa 乾式現像用レジスト
JPH0456979B2 (ja) * 1984-10-26 1992-09-10 Yu Se Be Erekutoronitsukusu Sa
JPS61219034A (ja) * 1985-03-19 1986-09-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 耐プラズマ性重合体物質の製法
JP2020002121A (ja) * 2018-05-07 2020-01-09 達興材料股▲ふん▼有限公司 シリコン含有化合物、これを用いる液晶組成物および液晶ディスプレイ
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography

Also Published As

Publication number Publication date
US4396704A (en) 1983-08-02
IT1150865B (it) 1986-12-17
DE3215082A1 (de) 1982-11-25
CA1175279A (en) 1984-10-02
IT8220867A0 (it) 1982-04-21
GB2097143A (en) 1982-10-27
GB2097143B (en) 1985-07-31

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