IT8220867A0 - Dispositivi allo stato solido prodotti mediante sviluppo di plasma di "resists". - Google Patents

Dispositivi allo stato solido prodotti mediante sviluppo di plasma di "resists".

Info

Publication number
IT8220867A0
IT8220867A0 IT8220867A IT2086782A IT8220867A0 IT 8220867 A0 IT8220867 A0 IT 8220867A0 IT 8220867 A IT8220867 A IT 8220867A IT 2086782 A IT2086782 A IT 2086782A IT 8220867 A0 IT8220867 A0 IT 8220867A0
Authority
IT
Italy
Prior art keywords
resists
solid state
state devices
devices produced
plasma development
Prior art date
Application number
IT8220867A
Other languages
English (en)
Other versions
IT1150865B (it
Inventor
Gary Newton Taylor
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8220867A0 publication Critical patent/IT8220867A0/it
Application granted granted Critical
Publication of IT1150865B publication Critical patent/IT1150865B/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IT20867/82A 1981-04-22 1982-04-21 Dispositivi allo stato solido prodotti mediante sviluppo di plasma di "resists" IT1150865B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/256,604 US4396704A (en) 1981-04-22 1981-04-22 Solid state devices produced by organometallic plasma developed resists

Publications (2)

Publication Number Publication Date
IT8220867A0 true IT8220867A0 (it) 1982-04-21
IT1150865B IT1150865B (it) 1986-12-17

Family

ID=22972869

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20867/82A IT1150865B (it) 1981-04-22 1982-04-21 Dispositivi allo stato solido prodotti mediante sviluppo di plasma di "resists"

Country Status (6)

Country Link
US (1) US4396704A (it)
JP (1) JPS57205736A (it)
CA (1) CA1175279A (it)
DE (1) DE3215082A1 (it)
GB (1) GB2097143B (it)
IT (1) IT1150865B (it)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500628A (en) * 1981-04-22 1985-02-19 At&T Bell Laboratories Process of making solid state devices using silicon containing organometallic plasma developed resists
JPS57202534A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Negative type resist composition
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPS5891632A (ja) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
US4560641A (en) * 1982-03-26 1985-12-24 Hitachi, Ltd. Method for forming fine multilayer resist patterns
DE3231457A1 (de) * 1982-08-24 1984-03-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von strukturen fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
US4517276A (en) * 1982-11-29 1985-05-14 Varian Associates, Inc. Metal-containing organic photoresists
US5215867A (en) * 1983-09-16 1993-06-01 At&T Bell Laboratories Method with gas functionalized plasma developed layer
US4596761A (en) * 1983-11-02 1986-06-24 Hughes Aircraft Company Graft polymerized SiO2 lithographic masks
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
US4481049A (en) * 1984-03-02 1984-11-06 At&T Bell Laboratories Bilevel resist
JPS60224136A (ja) * 1984-04-23 1985-11-08 Matsushita Electric Ind Co Ltd 光学記録材料および記録方法
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4702792A (en) * 1985-10-28 1987-10-27 International Business Machines Corporation Method of forming fine conductive lines, patterns and connectors
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US4761298A (en) * 1987-05-06 1988-08-02 The United States Of America As Represented By The Secretary Of The Army Method of precisely adjusting the frequency of a piezoelectric resonator
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US5108875A (en) * 1988-07-29 1992-04-28 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US5079131A (en) * 1988-08-29 1992-01-07 Shipley Company Inc. Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
US5094936A (en) * 1988-09-16 1992-03-10 Texas Instruments Incorporated High pressure photoresist silylation process and apparatus
US5213917A (en) * 1989-05-18 1993-05-25 Shipley Company Inc. Plasma processing with metal mask integration
US5053318A (en) * 1989-05-18 1991-10-01 Shipley Company Inc. Plasma processing with metal mask integration
US5275913A (en) * 1990-05-08 1994-01-04 Industrial Technology Research Institute Method for preparing resist patterns utilizing solvent development with subsequent resist pattern transfer, via a photo-hardening liquid adhesive, to a receiver substrate and oxygen reactive ion etching
US5304453A (en) * 1991-07-11 1994-04-19 Industrial Technology Research Institute Method for preparing resist patterns through image layer transfer to a receiver substrate, via a photo-hardening organic liquid adhesive, with subsequent oxygen reactive ion etching
US5262392A (en) * 1991-07-15 1993-11-16 Eastman Kodak Company Method for patterning metallo-organic percursor film and method for producing a patterned ceramic film and film products
US5366852A (en) * 1992-09-21 1994-11-22 Shipley Company, Inc. Methods for treating photoresists
EP0624827A1 (de) * 1993-05-12 1994-11-17 Ciba-Geigy Ag Verfahren zur Herstellung von Mikrostrukturen
JP2001234356A (ja) * 2000-02-24 2001-08-31 Seiko Epson Corp 膜の製造方法及びこれにより得られる膜
JP3697426B2 (ja) * 2002-04-24 2005-09-21 株式会社東芝 パターン形成方法および半導体装置の製造方法
US6737283B2 (en) 2002-08-29 2004-05-18 Micron Technology, Inc. Method to isolate device layer edges through mechanical spacing
US7704670B2 (en) 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
WO2008104881A1 (en) 2007-02-27 2008-09-04 Az Electronic Materials Usa Corp. Silicon-based antifrelective coating compositions
TWI679207B (zh) * 2018-05-07 2019-12-11 達興材料股份有限公司 含矽化合物、使用此含矽化合物的液晶組成物及液晶顯示裝置
JP2022507368A (ja) 2018-11-14 2022-01-18 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
TWI837391B (zh) * 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP7189375B2 (ja) 2020-01-15 2022-12-13 ラム リサーチ コーポレーション フォトレジスト接着および線量低減のための下層

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3809686A (en) * 1970-03-19 1974-05-07 Bell Telephone Labor Inc Transparent media capable of photoinduced refractive index changes and their application to light guides and the like
JPS5146001B2 (it) * 1971-09-20 1976-12-07
US3899338A (en) * 1972-02-09 1975-08-12 Horizons Inc Photosensitive material suitable for use as a photoresist
US4061829A (en) * 1976-04-26 1977-12-06 Bell Telephone Laboratories, Incorporated Negative resist for X-ray and electron beam lithography and method of using same
FR2375623A1 (fr) * 1976-06-23 1978-07-21 Commissariat Energie Atomique Nouveaux films photosensibles utilisables en microgravure
US4332879A (en) * 1978-12-01 1982-06-01 Hughes Aircraft Company Process for depositing a film of controlled composition using a metallo-organic photoresist
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4278753A (en) * 1980-02-25 1981-07-14 Horizons Research Incorporated Plasma developable photoresist composition with polyvinyl formal binder
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
EP0043480B1 (en) * 1980-06-25 1985-04-03 Hitachi, Ltd. Process for forming metallic images
US4329418A (en) * 1980-11-14 1982-05-11 Lord Corporation Organometallic semiconductor devices

Also Published As

Publication number Publication date
DE3215082A1 (de) 1982-11-25
IT1150865B (it) 1986-12-17
JPS57205736A (en) 1982-12-16
CA1175279A (en) 1984-10-02
GB2097143A (en) 1982-10-27
US4396704A (en) 1983-08-02
GB2097143B (en) 1985-07-31

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