JPS57202533A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS57202533A
JPS57202533A JP8756781A JP8756781A JPS57202533A JP S57202533 A JPS57202533 A JP S57202533A JP 8756781 A JP8756781 A JP 8756781A JP 8756781 A JP8756781 A JP 8756781A JP S57202533 A JPS57202533 A JP S57202533A
Authority
JP
Japan
Prior art keywords
layer
gaseous plasma
resist
radiations
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8756781A
Other languages
English (en)
Other versions
JPS6360899B2 (ja
Inventor
Jiro Naito
Yasuhiro Yoneda
Tateo Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8756781A priority Critical patent/JPS57202533A/ja
Publication of JPS57202533A publication Critical patent/JPS57202533A/ja
Publication of JPS6360899B2 publication Critical patent/JPS6360899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8756781A 1981-06-09 1981-06-09 Formation of pattern Granted JPS57202533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8756781A JPS57202533A (en) 1981-06-09 1981-06-09 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8756781A JPS57202533A (en) 1981-06-09 1981-06-09 Formation of pattern

Publications (2)

Publication Number Publication Date
JPS57202533A true JPS57202533A (en) 1982-12-11
JPS6360899B2 JPS6360899B2 (ja) 1988-11-25

Family

ID=13918562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8756781A Granted JPS57202533A (en) 1981-06-09 1981-06-09 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS57202533A (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPS5891632A (ja) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
JPS60241225A (ja) * 1984-05-14 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 陰画レジスト像を生成する方法
JPS61107346A (ja) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム フォトレジスト層中にネガ図形を形成する方法
JPS61219034A (ja) * 1985-03-19 1986-09-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 耐プラズマ性重合体物質の製法
JPS6224625A (ja) * 1985-07-24 1987-02-02 Nippon Telegr & Teleph Corp <Ntt> パタン形成方法
JPS6225424A (ja) * 1985-07-26 1987-02-03 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成法
JPH01102554A (ja) * 1987-10-16 1989-04-20 Masataka Murahara レジスト材料の現像方法
JPH01133325A (ja) * 1987-11-18 1989-05-25 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法
JPH02291562A (ja) * 1989-03-17 1990-12-03 Internatl Business Mach Corp <Ibm> フオトレジスト像の処理方法
JPH0320745A (ja) * 1989-06-16 1991-01-29 Sharp Corp レジストパターンの形成方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211143A (en) * 1981-06-23 1982-12-24 Oki Electric Ind Co Ltd Formation of micropattern
JPH0243172B2 (ja) * 1981-06-23 1990-09-27
JPS5891632A (ja) * 1981-11-27 1983-05-31 Oki Electric Ind Co Ltd 微細パタ−ン形成方法
JPS60241225A (ja) * 1984-05-14 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 陰画レジスト像を生成する方法
JPH0456978B2 (ja) * 1984-05-14 1992-09-10 Intaanashonaru Bijinesu Mashiinzu Corp
JPH0220869A (ja) * 1984-10-26 1990-01-24 Ucb Sa 乾式現像用レジスト
JPH0456979B2 (ja) * 1984-10-26 1992-09-10 Yu Se Be Erekutoronitsukusu Sa
JPS61107346A (ja) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム フォトレジスト層中にネガ図形を形成する方法
JPS61219034A (ja) * 1985-03-19 1986-09-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 耐プラズマ性重合体物質の製法
JPS6224625A (ja) * 1985-07-24 1987-02-02 Nippon Telegr & Teleph Corp <Ntt> パタン形成方法
JPS6225424A (ja) * 1985-07-26 1987-02-03 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成法
JPH01102554A (ja) * 1987-10-16 1989-04-20 Masataka Murahara レジスト材料の現像方法
JPH01133325A (ja) * 1987-11-18 1989-05-25 Nippon Telegr & Teleph Corp <Ntt> パターン形成方法
JPH02291562A (ja) * 1989-03-17 1990-12-03 Internatl Business Mach Corp <Ibm> フオトレジスト像の処理方法
JPH0320745A (ja) * 1989-06-16 1991-01-29 Sharp Corp レジストパターンの形成方法

Also Published As

Publication number Publication date
JPS6360899B2 (ja) 1988-11-25

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