JPS57196527A - Method and device for growing epitaxial layer of semiconductor crystal - Google Patents

Method and device for growing epitaxial layer of semiconductor crystal

Info

Publication number
JPS57196527A
JPS57196527A JP8009381A JP8009381A JPS57196527A JP S57196527 A JPS57196527 A JP S57196527A JP 8009381 A JP8009381 A JP 8009381A JP 8009381 A JP8009381 A JP 8009381A JP S57196527 A JPS57196527 A JP S57196527A
Authority
JP
Japan
Prior art keywords
substrate
spacer
growth
contact
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8009381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0258769B2 (enrdf_load_stackoverflow
Inventor
Keijiro Hirahara
Tadashi Komatsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8009381A priority Critical patent/JPS57196527A/ja
Publication of JPS57196527A publication Critical patent/JPS57196527A/ja
Publication of JPH0258769B2 publication Critical patent/JPH0258769B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8009381A 1981-05-28 1981-05-28 Method and device for growing epitaxial layer of semiconductor crystal Granted JPS57196527A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8009381A JPS57196527A (en) 1981-05-28 1981-05-28 Method and device for growing epitaxial layer of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8009381A JPS57196527A (en) 1981-05-28 1981-05-28 Method and device for growing epitaxial layer of semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS57196527A true JPS57196527A (en) 1982-12-02
JPH0258769B2 JPH0258769B2 (enrdf_load_stackoverflow) 1990-12-10

Family

ID=13708575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8009381A Granted JPS57196527A (en) 1981-05-28 1981-05-28 Method and device for growing epitaxial layer of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS57196527A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0258769B2 (enrdf_load_stackoverflow) 1990-12-10

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