JPH0258769B2 - - Google Patents
Info
- Publication number
- JPH0258769B2 JPH0258769B2 JP8009381A JP8009381A JPH0258769B2 JP H0258769 B2 JPH0258769 B2 JP H0258769B2 JP 8009381 A JP8009381 A JP 8009381A JP 8009381 A JP8009381 A JP 8009381A JP H0258769 B2 JPH0258769 B2 JP H0258769B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- semiconductor substrate
- chamber
- reservoir
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 16
- 239000007791 liquid phase Substances 0.000 claims description 10
- 239000002699 waste material Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8009381A JPS57196527A (en) | 1981-05-28 | 1981-05-28 | Method and device for growing epitaxial layer of semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8009381A JPS57196527A (en) | 1981-05-28 | 1981-05-28 | Method and device for growing epitaxial layer of semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57196527A JPS57196527A (en) | 1982-12-02 |
| JPH0258769B2 true JPH0258769B2 (enrdf_load_stackoverflow) | 1990-12-10 |
Family
ID=13708575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8009381A Granted JPS57196527A (en) | 1981-05-28 | 1981-05-28 | Method and device for growing epitaxial layer of semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196527A (enrdf_load_stackoverflow) |
-
1981
- 1981-05-28 JP JP8009381A patent/JPS57196527A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57196527A (en) | 1982-12-02 |