JPS57187967A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57187967A
JPS57187967A JP56072507A JP7250781A JPS57187967A JP S57187967 A JPS57187967 A JP S57187967A JP 56072507 A JP56072507 A JP 56072507A JP 7250781 A JP7250781 A JP 7250781A JP S57187967 A JPS57187967 A JP S57187967A
Authority
JP
Japan
Prior art keywords
layer
electrode
ion
metal layer
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56072507A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0249012B2 (enrdf_load_stackoverflow
Inventor
Hideaki Kozu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56072507A priority Critical patent/JPS57187967A/ja
Publication of JPS57187967A publication Critical patent/JPS57187967A/ja
Publication of JPH0249012B2 publication Critical patent/JPH0249012B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56072507A 1981-05-14 1981-05-14 Manufacture of semiconductor device Granted JPS57187967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072507A JPS57187967A (en) 1981-05-14 1981-05-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072507A JPS57187967A (en) 1981-05-14 1981-05-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57187967A true JPS57187967A (en) 1982-11-18
JPH0249012B2 JPH0249012B2 (enrdf_load_stackoverflow) 1990-10-26

Family

ID=13491319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072507A Granted JPS57187967A (en) 1981-05-14 1981-05-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57187967A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161879A (ja) * 1983-03-04 1984-09-12 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS59191384A (ja) * 1983-04-15 1984-10-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6046074A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタの製造方法
JPS60136267A (ja) * 1983-12-23 1985-07-19 Fujitsu Ltd 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161879A (ja) * 1983-03-04 1984-09-12 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS59191384A (ja) * 1983-04-15 1984-10-30 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6046074A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタの製造方法
JPS60136267A (ja) * 1983-12-23 1985-07-19 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0249012B2 (enrdf_load_stackoverflow) 1990-10-26

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