JPS5696863A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5696863A JPS5696863A JP17154479A JP17154479A JPS5696863A JP S5696863 A JPS5696863 A JP S5696863A JP 17154479 A JP17154479 A JP 17154479A JP 17154479 A JP17154479 A JP 17154479A JP S5696863 A JPS5696863 A JP S5696863A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aluminum
- covered
- gaas
- boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010408 film Substances 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain reliably the GaAs bulk conductivity type MOSFET having preferable characteristics by selectively forming an aluminum oxide film having small boundary density and high quality on the region except a source and a drain. CONSTITUTION:A P type GaAs film 8 is formed on the GaAs semi-insulating substrate 7, is mesa etched, and an aluminum thin film 9 is covered thereon. When a resist mask 10 is covered thereon, only the film 9 is completely subject to anodic oxidation and is transformed to Al2O3 film 11, an insulating film having the least boundary level density can be obtained. The resist 10 is removed, and the aluminum is selectively etched and removed. Subsequently, after it is annealed at approx. 400 deg.C for 30min, ohmic metal such as Au, Ge, Ni or the like is covered on the aluminum removed part, electrodes 12, 13 are attached thereto, and finally an aluminum gate electrode 14 is formed completely on the gate region. The boundary characteristics of the bulk conductivity type MOSFET according to this configuration is remarkably excellent as compared with the conventional process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17154479A JPS5696863A (en) | 1979-12-29 | 1979-12-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17154479A JPS5696863A (en) | 1979-12-29 | 1979-12-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5696863A true JPS5696863A (en) | 1981-08-05 |
| JPS6159674B2 JPS6159674B2 (en) | 1986-12-17 |
Family
ID=15925085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17154479A Granted JPS5696863A (en) | 1979-12-29 | 1979-12-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5696863A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705027A (en) * | 1995-04-18 | 1998-01-06 | Mitsubishi Denki Kabushiki Kaisha | Method of removing etching residues |
-
1979
- 1979-12-29 JP JP17154479A patent/JPS5696863A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705027A (en) * | 1995-04-18 | 1998-01-06 | Mitsubishi Denki Kabushiki Kaisha | Method of removing etching residues |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159674B2 (en) | 1986-12-17 |
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