JPS57187963A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57187963A JPS57187963A JP56072502A JP7250281A JPS57187963A JP S57187963 A JPS57187963 A JP S57187963A JP 56072502 A JP56072502 A JP 56072502A JP 7250281 A JP7250281 A JP 7250281A JP S57187963 A JPS57187963 A JP S57187963A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact part
- metal
- contact
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 229910007277 Si3 N4 Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56072502A JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56072502A JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57187963A true JPS57187963A (en) | 1982-11-18 |
| JPS6335109B2 JPS6335109B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-07-13 |
Family
ID=13491171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56072502A Granted JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57187963A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111375A (ja) * | 1982-12-08 | 1984-06-27 | エヌ・ベ−・フイリップス・フル−イランペンファブリケン | 半導体デバイスおよびその製造方法 |
| JPS59121872A (ja) * | 1982-12-15 | 1984-07-14 | Fujitsu Ltd | 半導体装置 |
| JPS59161060A (ja) * | 1982-12-20 | 1984-09-11 | レイセオン カンパニ− | 半導体デバイスの製造方法 |
| JPS63257269A (ja) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | 半導体装置のコンタクト形成方法 |
| JPH02125463A (ja) * | 1988-11-04 | 1990-05-14 | Hitachi Ltd | 半導体装置の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177076A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | Handotaisochinoseizohoho |
-
1981
- 1981-05-14 JP JP56072502A patent/JPS57187963A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177076A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | Handotaisochinoseizohoho |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111375A (ja) * | 1982-12-08 | 1984-06-27 | エヌ・ベ−・フイリップス・フル−イランペンファブリケン | 半導体デバイスおよびその製造方法 |
| JPS59121872A (ja) * | 1982-12-15 | 1984-07-14 | Fujitsu Ltd | 半導体装置 |
| JPS59161060A (ja) * | 1982-12-20 | 1984-09-11 | レイセオン カンパニ− | 半導体デバイスの製造方法 |
| JPS63257269A (ja) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | 半導体装置のコンタクト形成方法 |
| JPH02125463A (ja) * | 1988-11-04 | 1990-05-14 | Hitachi Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6335109B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-07-13 |
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