JPS57185973A - Production of target for sputtering - Google Patents
Production of target for sputteringInfo
- Publication number
- JPS57185973A JPS57185973A JP6763081A JP6763081A JPS57185973A JP S57185973 A JPS57185973 A JP S57185973A JP 6763081 A JP6763081 A JP 6763081A JP 6763081 A JP6763081 A JP 6763081A JP S57185973 A JPS57185973 A JP S57185973A
- Authority
- JP
- Japan
- Prior art keywords
- target
- plate
- backing plate
- alloy
- adhesive strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910000846 In alloy Inorganic materials 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6763081A JPS57185973A (en) | 1981-05-07 | 1981-05-07 | Production of target for sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6763081A JPS57185973A (en) | 1981-05-07 | 1981-05-07 | Production of target for sputtering |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57185973A true JPS57185973A (en) | 1982-11-16 |
JPS6344820B2 JPS6344820B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-09-07 |
Family
ID=13350490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6763081A Granted JPS57185973A (en) | 1981-05-07 | 1981-05-07 | Production of target for sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57185973A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6060454U (ja) * | 1983-09-30 | 1985-04-26 | 鹿児島日本電気株式会社 | スパツタリング用タ−ゲツト |
JPS61136673A (ja) * | 1984-12-07 | 1986-06-24 | Sumitomo Special Metals Co Ltd | スパツタリング用タ−ゲツト材 |
EP0768387A1 (de) * | 1995-10-11 | 1997-04-16 | LEYBOLD MATERIALS GmbH | Feinkörniges Sputtertarget mit einem vorgegebenen Breiten- zu Dickenverhältnis sowie Verfahren zu seiner Herstellung |
JP2012052190A (ja) * | 2010-09-01 | 2012-03-15 | Jx Nippon Mining & Metals Corp | インジウムターゲット及びその製造方法 |
JP2012184469A (ja) * | 2011-03-04 | 2012-09-27 | Mitsubishi Materials Corp | Inスパッタリングターゲットの製造方法 |
JP5074628B1 (ja) * | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット及びその製造方法 |
KR101297446B1 (ko) * | 2011-03-01 | 2013-08-16 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 인듐 타깃 및 그 제조 방법 |
TWI473898B (zh) * | 2011-04-15 | 2015-02-21 | Mitsui Mining & Smelting Co | 太陽電池用濺鍍靶 |
JP2015036431A (ja) * | 2013-08-12 | 2015-02-23 | 住友金属鉱山株式会社 | 円筒形スパッタリングターゲットおよびその製造方法。 |
US9023487B2 (en) | 2011-09-21 | 2015-05-05 | Jx Nippon Mining & Metals Corporation | Laminated structure and method for producing the same |
US9490108B2 (en) | 2010-09-01 | 2016-11-08 | Jx Nippon Mining & Metals Corporation | Indium target and method for manufacturing same |
US9761421B2 (en) | 2012-08-22 | 2017-09-12 | Jx Nippon Mining & Metals Corporation | Indium cylindrical sputtering target and manufacturing method thereof |
US9922807B2 (en) | 2013-07-08 | 2018-03-20 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
CN108165936A (zh) * | 2017-12-21 | 2018-06-15 | 清远先导材料有限公司 | 制备铟靶材的方法 |
CN108754437A (zh) * | 2014-02-04 | 2018-11-06 | Jx金属株式会社 | 溅射靶 |
CN110016576A (zh) * | 2019-04-12 | 2019-07-16 | 东莞市欧莱溅射靶材有限公司 | 锡铜合金靶生产工艺 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4872014B1 (ja) * | 2010-08-31 | 2012-02-08 | Jx日鉱日石金属株式会社 | 積層構造体及びその製造方法 |
JP4837785B1 (ja) * | 2010-09-01 | 2011-12-14 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP4884561B1 (ja) * | 2011-04-19 | 2012-02-29 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
WO2013088785A1 (ja) * | 2011-12-12 | 2013-06-20 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット部材及びその製造方法 |
JP5281186B1 (ja) * | 2012-10-25 | 2013-09-04 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
-
1981
- 1981-05-07 JP JP6763081A patent/JPS57185973A/ja active Granted
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6060454U (ja) * | 1983-09-30 | 1985-04-26 | 鹿児島日本電気株式会社 | スパツタリング用タ−ゲツト |
JPS61136673A (ja) * | 1984-12-07 | 1986-06-24 | Sumitomo Special Metals Co Ltd | スパツタリング用タ−ゲツト材 |
EP0768387A1 (de) * | 1995-10-11 | 1997-04-16 | LEYBOLD MATERIALS GmbH | Feinkörniges Sputtertarget mit einem vorgegebenen Breiten- zu Dickenverhältnis sowie Verfahren zu seiner Herstellung |
JP2012052190A (ja) * | 2010-09-01 | 2012-03-15 | Jx Nippon Mining & Metals Corp | インジウムターゲット及びその製造方法 |
US9490108B2 (en) | 2010-09-01 | 2016-11-08 | Jx Nippon Mining & Metals Corporation | Indium target and method for manufacturing same |
KR101297446B1 (ko) * | 2011-03-01 | 2013-08-16 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 인듐 타깃 및 그 제조 방법 |
US9139900B2 (en) | 2011-03-01 | 2015-09-22 | JX Nippon Mining Metals Corporation | Indium target and manufacturing method thereof |
JP2012184469A (ja) * | 2011-03-04 | 2012-09-27 | Mitsubishi Materials Corp | Inスパッタリングターゲットの製造方法 |
TWI473898B (zh) * | 2011-04-15 | 2015-02-21 | Mitsui Mining & Smelting Co | 太陽電池用濺鍍靶 |
US9023487B2 (en) | 2011-09-21 | 2015-05-05 | Jx Nippon Mining & Metals Corporation | Laminated structure and method for producing the same |
JP5074628B1 (ja) * | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット及びその製造方法 |
WO2013103029A1 (ja) * | 2012-01-05 | 2013-07-11 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット及びその製造方法 |
US9758860B2 (en) | 2012-01-05 | 2017-09-12 | Jx Nippon Mining & Metals Corporation | Indium sputtering target and method for manufacturing same |
US9761421B2 (en) | 2012-08-22 | 2017-09-12 | Jx Nippon Mining & Metals Corporation | Indium cylindrical sputtering target and manufacturing method thereof |
US9922807B2 (en) | 2013-07-08 | 2018-03-20 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
JP2015036431A (ja) * | 2013-08-12 | 2015-02-23 | 住友金属鉱山株式会社 | 円筒形スパッタリングターゲットおよびその製造方法。 |
CN108754437A (zh) * | 2014-02-04 | 2018-11-06 | Jx金属株式会社 | 溅射靶 |
CN108754437B (zh) * | 2014-02-04 | 2021-06-29 | Jx金属株式会社 | 溅射靶 |
CN108165936A (zh) * | 2017-12-21 | 2018-06-15 | 清远先导材料有限公司 | 制备铟靶材的方法 |
CN110016576A (zh) * | 2019-04-12 | 2019-07-16 | 东莞市欧莱溅射靶材有限公司 | 锡铜合金靶生产工艺 |
CN110016576B (zh) * | 2019-04-12 | 2022-03-01 | 东莞市欧莱溅射靶材有限公司 | 锡铜合金靶生产工艺 |
Also Published As
Publication number | Publication date |
---|---|
JPS6344820B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-09-07 |
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