JPS57180116A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57180116A
JPS57180116A JP6554281A JP6554281A JPS57180116A JP S57180116 A JPS57180116 A JP S57180116A JP 6554281 A JP6554281 A JP 6554281A JP 6554281 A JP6554281 A JP 6554281A JP S57180116 A JPS57180116 A JP S57180116A
Authority
JP
Japan
Prior art keywords
soi
annealed
transformed
single crystal
nonsingle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6554281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337728B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6554281A priority Critical patent/JPS57180116A/ja
Publication of JPS57180116A publication Critical patent/JPS57180116A/ja
Publication of JPH0337728B2 publication Critical patent/JPH0337728B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP6554281A 1981-04-30 1981-04-30 Manufacture of semiconductor device Granted JPS57180116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6554281A JPS57180116A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6554281A JPS57180116A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180116A true JPS57180116A (en) 1982-11-06
JPH0337728B2 JPH0337728B2 (enrdf_load_stackoverflow) 1991-06-06

Family

ID=13290003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6554281A Granted JPS57180116A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180116A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182923A (ja) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
JPH05235039A (ja) * 1992-02-19 1993-09-10 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JPH05235038A (ja) * 1992-02-19 1993-09-10 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JPH06342757A (ja) * 1994-04-15 1994-12-13 Semiconductor Energy Lab Co Ltd レーザー処理装置
US5861337A (en) * 1991-05-28 1999-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6576534B1 (en) 1991-09-21 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1978 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182923A (ja) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
US5861337A (en) * 1991-05-28 1999-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6174374B1 (en) 1991-05-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6494162B1 (en) 1991-05-28 2002-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6770143B2 (en) 1991-05-28 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6576534B1 (en) 1991-09-21 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6924212B2 (en) 1991-09-21 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US7368367B2 (en) 1991-09-21 2008-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JPH05235039A (ja) * 1992-02-19 1993-09-10 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JPH05235038A (ja) * 1992-02-19 1993-09-10 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JPH06342757A (ja) * 1994-04-15 1994-12-13 Semiconductor Energy Lab Co Ltd レーザー処理装置

Also Published As

Publication number Publication date
JPH0337728B2 (enrdf_load_stackoverflow) 1991-06-06

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