JPS57176775A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS57176775A
JPS57176775A JP56062096A JP6209681A JPS57176775A JP S57176775 A JPS57176775 A JP S57176775A JP 56062096 A JP56062096 A JP 56062096A JP 6209681 A JP6209681 A JP 6209681A JP S57176775 A JPS57176775 A JP S57176775A
Authority
JP
Japan
Prior art keywords
sio2 film
film
resist
yield rate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56062096A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6336150B2 (enrdf_load_stackoverflow
Inventor
Kenichi Kikuchi
Hideki Hayashi
Toshiki Ehata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56062096A priority Critical patent/JPS57176775A/ja
Publication of JPS57176775A publication Critical patent/JPS57176775A/ja
Publication of JPS6336150B2 publication Critical patent/JPS6336150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56062096A 1981-04-23 1981-04-23 Manufacture of field effect transistor Granted JPS57176775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062096A JPS57176775A (en) 1981-04-23 1981-04-23 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062096A JPS57176775A (en) 1981-04-23 1981-04-23 Manufacture of field effect transistor

Publications (2)

Publication Number Publication Date
JPS57176775A true JPS57176775A (en) 1982-10-30
JPS6336150B2 JPS6336150B2 (enrdf_load_stackoverflow) 1988-07-19

Family

ID=13190174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062096A Granted JPS57176775A (en) 1981-04-23 1981-04-23 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS57176775A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206177A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039879A (enrdf_load_stackoverflow) * 1973-08-13 1975-04-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039879A (enrdf_load_stackoverflow) * 1973-08-13 1975-04-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206177A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6336150B2 (enrdf_load_stackoverflow) 1988-07-19

Similar Documents

Publication Publication Date Title
JPS57176775A (en) Manufacture of field effect transistor
JPS56155531A (en) Manufacture of semiconductor device
JPS57198661A (en) Semiconductor device
JPS57178374A (en) Junction type field-efect transistor and its manufacture
JPS5752174A (en) Multigate field effect transistor
JP2645993B2 (ja) 電界効果型半導体装置及びその製造方法
JPS5671980A (en) Schottky barrier gate type field effect transistor and preparation method thereof
JPS57178373A (en) Schottky gate field-effect transistor
JPS5627973A (en) Manufacture of compound semiconductor device
JPS5636170A (en) Manufacture of field-effect semiconductor device
JPS57133681A (en) Field-effect semiconductor device
JPS54162461A (en) Manufacture for semiconductor device
JPS5698877A (en) Gaas field effect transistor
JPS57197871A (en) Semiconductor device and manufacture thereof
JPS647571A (en) Manufacture of semiconductor device
JPS6461065A (en) Field-effect transistor and manufacture thereof
JPS57176774A (en) Field effect transistor and manufacture thereof
JPS5676580A (en) Lateral field effect transistor and manufacture thereof
JPS57198663A (en) Manufacture of semiconductor device
JPS56112758A (en) Insulated gate type semiconductor device and manufacture thereof
JPS6441270A (en) Manufacture of field effect transistor
JPS57126168A (en) Schottky gate field effect transistor
JPS5586164A (en) Manufacture of crossover gate type field-effect transistor
JPS57114284A (en) Field effect transistor
JPS5518076A (en) Manufacture of field-effect transistor