JPS5039879A - - Google Patents

Info

Publication number
JPS5039879A
JPS5039879A JP48090692A JP9069273A JPS5039879A JP S5039879 A JPS5039879 A JP S5039879A JP 48090692 A JP48090692 A JP 48090692A JP 9069273 A JP9069273 A JP 9069273A JP S5039879 A JPS5039879 A JP S5039879A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48090692A
Other languages
Japanese (ja)
Other versions
JPS5644582B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9069273A priority Critical patent/JPS5644582B2/ja
Publication of JPS5039879A publication Critical patent/JPS5039879A/ja
Publication of JPS5644582B2 publication Critical patent/JPS5644582B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9069273A 1973-08-13 1973-08-13 Expired JPS5644582B2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9069273A JPS5644582B2 (enrdf_load_stackoverflow) 1973-08-13 1973-08-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9069273A JPS5644582B2 (enrdf_load_stackoverflow) 1973-08-13 1973-08-13

Publications (2)

Publication Number Publication Date
JPS5039879A true JPS5039879A (enrdf_load_stackoverflow) 1975-04-12
JPS5644582B2 JPS5644582B2 (enrdf_load_stackoverflow) 1981-10-20

Family

ID=14005569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9069273A Expired JPS5644582B2 (enrdf_load_stackoverflow) 1973-08-13 1973-08-13

Country Status (1)

Country Link
JP (1) JPS5644582B2 (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130478A (en) * 1981-02-06 1982-08-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
JPS57176775A (en) * 1981-04-23 1982-10-30 Sumitomo Electric Ind Ltd Manufacture of field effect transistor
JPS57178377A (en) * 1981-04-17 1982-11-02 Ibm Method of producing field effect transistor
JPS5848470A (ja) * 1981-08-31 1983-03-22 バロ−ス・コ−ポレ−シヨン 金属半導体電界効果トランジスタの製造方法
JPS58206167A (ja) * 1982-05-26 1983-12-01 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS59165461A (ja) * 1983-03-10 1984-09-18 Oki Electric Ind Co Ltd ショットキ接合形化合物半導体電界効果トランジスタの製造方法
JPS60157262A (ja) * 1984-01-26 1985-08-17 Mitsubishi Electric Corp 半導体集積回路
JPS6239075A (ja) * 1985-08-14 1987-02-20 Mitsubishi Electric Corp ガリウム砒素半導体集積回路
JPH02212056A (ja) * 1989-02-09 1990-08-23 Nippei Toyama Corp 芯なし研削盤

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130478A (en) * 1981-02-06 1982-08-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
JPS57178377A (en) * 1981-04-17 1982-11-02 Ibm Method of producing field effect transistor
JPS57176775A (en) * 1981-04-23 1982-10-30 Sumitomo Electric Ind Ltd Manufacture of field effect transistor
JPS5848470A (ja) * 1981-08-31 1983-03-22 バロ−ス・コ−ポレ−シヨン 金属半導体電界効果トランジスタの製造方法
JPS58206167A (ja) * 1982-05-26 1983-12-01 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS59165461A (ja) * 1983-03-10 1984-09-18 Oki Electric Ind Co Ltd ショットキ接合形化合物半導体電界効果トランジスタの製造方法
JPS60157262A (ja) * 1984-01-26 1985-08-17 Mitsubishi Electric Corp 半導体集積回路
JPS6239075A (ja) * 1985-08-14 1987-02-20 Mitsubishi Electric Corp ガリウム砒素半導体集積回路
JPH02212056A (ja) * 1989-02-09 1990-08-23 Nippei Toyama Corp 芯なし研削盤

Also Published As

Publication number Publication date
JPS5644582B2 (enrdf_load_stackoverflow) 1981-10-20

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