JPS6336150B2 - - Google Patents

Info

Publication number
JPS6336150B2
JPS6336150B2 JP56062096A JP6209681A JPS6336150B2 JP S6336150 B2 JPS6336150 B2 JP S6336150B2 JP 56062096 A JP56062096 A JP 56062096A JP 6209681 A JP6209681 A JP 6209681A JP S6336150 B2 JPS6336150 B2 JP S6336150B2
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor layer
forming
gate electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56062096A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57176775A (en
Inventor
Kenichi Kikuchi
Hideki Hayashi
Toshiki Ehata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56062096A priority Critical patent/JPS57176775A/ja
Publication of JPS57176775A publication Critical patent/JPS57176775A/ja
Publication of JPS6336150B2 publication Critical patent/JPS6336150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56062096A 1981-04-23 1981-04-23 Manufacture of field effect transistor Granted JPS57176775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062096A JPS57176775A (en) 1981-04-23 1981-04-23 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062096A JPS57176775A (en) 1981-04-23 1981-04-23 Manufacture of field effect transistor

Publications (2)

Publication Number Publication Date
JPS57176775A JPS57176775A (en) 1982-10-30
JPS6336150B2 true JPS6336150B2 (enrdf_load_stackoverflow) 1988-07-19

Family

ID=13190174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062096A Granted JPS57176775A (en) 1981-04-23 1981-04-23 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS57176775A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206177A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644582B2 (enrdf_load_stackoverflow) * 1973-08-13 1981-10-20

Also Published As

Publication number Publication date
JPS57176775A (en) 1982-10-30

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