JPS6125226B2 - - Google Patents

Info

Publication number
JPS6125226B2
JPS6125226B2 JP53024802A JP2480278A JPS6125226B2 JP S6125226 B2 JPS6125226 B2 JP S6125226B2 JP 53024802 A JP53024802 A JP 53024802A JP 2480278 A JP2480278 A JP 2480278A JP S6125226 B2 JPS6125226 B2 JP S6125226B2
Authority
JP
Japan
Prior art keywords
region
semiconductor
oxide film
single crystal
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53024802A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54117690A (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2480278A priority Critical patent/JPS54117690A/ja
Publication of JPS54117690A publication Critical patent/JPS54117690A/ja
Publication of JPS6125226B2 publication Critical patent/JPS6125226B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2480278A 1978-03-03 1978-03-03 Production of semiconductor device Granted JPS54117690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2480278A JPS54117690A (en) 1978-03-03 1978-03-03 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2480278A JPS54117690A (en) 1978-03-03 1978-03-03 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54117690A JPS54117690A (en) 1979-09-12
JPS6125226B2 true JPS6125226B2 (enrdf_load_stackoverflow) 1986-06-14

Family

ID=12148317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2480278A Granted JPS54117690A (en) 1978-03-03 1978-03-03 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54117690A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190905A (ja) * 1987-01-31 1988-08-08 Hiroshi Sato 並列駆動油圧モ−タ装置および油圧モ−タ駆動車両
JPS63172725U (enrdf_load_stackoverflow) * 1987-04-30 1988-11-09

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480501A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190905A (ja) * 1987-01-31 1988-08-08 Hiroshi Sato 並列駆動油圧モ−タ装置および油圧モ−タ駆動車両
JPS63172725U (enrdf_load_stackoverflow) * 1987-04-30 1988-11-09

Also Published As

Publication number Publication date
JPS54117690A (en) 1979-09-12

Similar Documents

Publication Publication Date Title
US5087581A (en) Method of forming vertical FET device with low gate to source overlap capacitance
US3974515A (en) IGFET on an insulating substrate
JP2503460B2 (ja) バイポ−ラトランジスタおよびその製造方法
US4043848A (en) Method of fabrication of insulated gate field effect semiconductor devices
US4477963A (en) Method of fabrication of a low capacitance self-aligned semiconductor electrode structure
JPS6125226B2 (enrdf_load_stackoverflow)
JPS61247051A (ja) 半導体装置の製造方法
JP2720911B2 (ja) 半導体装置用基板表面を用意する方法
JPS5911645A (ja) 半導体装置の製造方法
US4876581A (en) Field effect transistor with short channel length and process of fabrication thereof
JPS6139748B2 (enrdf_load_stackoverflow)
JPS6237890B2 (enrdf_load_stackoverflow)
JPS6042636B2 (ja) 静電誘導形トランジスタの製造方法
JPS6313378A (ja) 半導体装置およびその製造方法
JPS60753A (ja) 半導体装置の製造方法
JPS6395664A (ja) 半導体装置の製造方法
RU795311C (ru) Способ изготовлени транзисторных структур
JPS62238669A (ja) 縦型電界効果トランジスタの製造方法
JPS6028383B2 (ja) 半導体基板内への選択的不純物拡散法
JPH04348037A (ja) 半導体装置とその製造方法
JPS6011472B2 (ja) Ｍｏｓトランジスタの製造方法
JPS5931228B2 (ja) Ｍｏｓ デンカイコウカハンドウタイソウチノセイゾウホウホウ
JPS6145868B2 (enrdf_load_stackoverflow)
JPH03177073A (ja) 薄膜トランジスタ
JPS6336150B2 (enrdf_load_stackoverflow)