JPS57167631A - Plasma vapor-phase growing method - Google Patents

Plasma vapor-phase growing method

Info

Publication number
JPS57167631A
JPS57167631A JP56036385A JP3638581A JPS57167631A JP S57167631 A JPS57167631 A JP S57167631A JP 56036385 A JP56036385 A JP 56036385A JP 3638581 A JP3638581 A JP 3638581A JP S57167631 A JPS57167631 A JP S57167631A
Authority
JP
Japan
Prior art keywords
plasma
sih4
activation
gas
generating region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56036385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6347141B2 (enrdf_load_stackoverflow
Inventor
Kanetake Takasaki
Kenji Koyama
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56036385A priority Critical patent/JPS57167631A/ja
Publication of JPS57167631A publication Critical patent/JPS57167631A/ja
Publication of JPS6347141B2 publication Critical patent/JPS6347141B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP56036385A 1981-03-13 1981-03-13 Plasma vapor-phase growing method Granted JPS57167631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56036385A JPS57167631A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56036385A JPS57167631A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing method

Publications (2)

Publication Number Publication Date
JPS57167631A true JPS57167631A (en) 1982-10-15
JPS6347141B2 JPS6347141B2 (enrdf_load_stackoverflow) 1988-09-20

Family

ID=12468374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56036385A Granted JPS57167631A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing method

Country Status (1)

Country Link
JP (1) JPS57167631A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148326A (ja) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Ｃｖｄ薄膜製造方法
JPS59225517A (ja) * 1983-06-06 1984-12-18 Nippon Denso Co Ltd 非晶室半導体の製造方法
FR2584098A1 (fr) * 1985-06-27 1987-01-02 Air Liquide Procede de depot d'un revetement de silicium sur une piece metallique
JPS6222420A (ja) * 1985-07-23 1987-01-30 Canon Inc 堆積膜形成装置
JPS63125679A (ja) * 1987-05-30 1988-05-28 Canon Inc 堆積膜形成法
US4820378A (en) * 1987-07-17 1989-04-11 Texas Instruments Incorporated Process for etching silicon nitride selectively to silicon oxide
EP0120307A3 (en) * 1983-02-25 1989-05-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
US4838984A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for etching films of mercury-cadmium-telluride and zinc sulfid
US4838990A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
JPH01227430A (ja) * 1988-03-08 1989-09-11 Sony Corp 気相成長方法
US4886570A (en) * 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
JPH02320A (ja) * 1987-07-16 1990-01-05 Texas Instr Inc <Ti> 処理装置及び方法
JPH028361A (ja) * 1987-07-16 1990-01-11 Texas Instr Inc <Ti> 処理装置及び方法
US5030475A (en) * 1988-09-06 1991-07-09 Schott Glaswerke Plasma-enhanced CVD coating process
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02208060A (ja) * 1989-02-07 1990-08-17 Kubota Ltd カラープリンタ
JPH02208059A (ja) * 1989-02-07 1990-08-17 Kubota Ltd カラープリンタ
US6461692B2 (en) * 1996-02-23 2002-10-08 Ebara Corporation Chemical vapor deposition method and chemical vapor deposition apparatus

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148326A (ja) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Ｃｖｄ薄膜製造方法
EP0120307A3 (en) * 1983-02-25 1989-05-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
JPS59225517A (ja) * 1983-06-06 1984-12-18 Nippon Denso Co Ltd 非晶室半導体の製造方法
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US5976259A (en) * 1985-02-14 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6113701A (en) * 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
FR2584098A1 (fr) * 1985-06-27 1987-01-02 Air Liquide Procede de depot d'un revetement de silicium sur une piece metallique
JPS6222420A (ja) * 1985-07-23 1987-01-30 Canon Inc 堆積膜形成装置
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
JPS63125679A (ja) * 1987-05-30 1988-05-28 Canon Inc 堆積膜形成法
US4838990A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4886570A (en) * 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
JPH02320A (ja) * 1987-07-16 1990-01-05 Texas Instr Inc <Ti> 処理装置及び方法
JPH028361A (ja) * 1987-07-16 1990-01-11 Texas Instr Inc <Ti> 処理装置及び方法
US4844773A (en) * 1987-07-16 1989-07-04 Texas Instruments Incorporated Process for etching silicon nitride film
US4838984A (en) * 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for etching films of mercury-cadmium-telluride and zinc sulfid
US4820378A (en) * 1987-07-17 1989-04-11 Texas Instruments Incorporated Process for etching silicon nitride selectively to silicon oxide
JPH01227430A (ja) * 1988-03-08 1989-09-11 Sony Corp 気相成長方法
US5062508A (en) * 1988-09-06 1991-11-05 Schott Glaswerke Cvd coating process for producing coatings and apparatus for carrying out the process
US5030475A (en) * 1988-09-06 1991-07-09 Schott Glaswerke Plasma-enhanced CVD coating process
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate

Also Published As

Publication number Publication date
JPS6347141B2 (enrdf_load_stackoverflow) 1988-09-20

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