FR2443137A1 - Procede pour ameliorer l'uniformite des couches epitaxiales, dispositif et produits obtenus - Google Patents
Procede pour ameliorer l'uniformite des couches epitaxiales, dispositif et produits obtenusInfo
- Publication number
- FR2443137A1 FR2443137A1 FR7833831A FR7833831A FR2443137A1 FR 2443137 A1 FR2443137 A1 FR 2443137A1 FR 7833831 A FR7833831 A FR 7833831A FR 7833831 A FR7833831 A FR 7833831A FR 2443137 A1 FR2443137 A1 FR 2443137A1
- Authority
- FR
- France
- Prior art keywords
- chamber
- technique
- carrier gas
- mfr
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
L'invention concerne l'amélioration des procédés de croissance épitaxiale en phase vapeur, en ce qui concerne l'homogénéité et la reproductibilité des mélanges gazeux. Les couches obtenues présentent ainsi une excellente uniformité. Le dispositif comprend une chambre d'homogénéisation et une source dite fractionnée. Application : couches minces, éléments semi-conducteurs.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7833831A FR2443137A1 (fr) | 1978-11-30 | 1978-11-30 | Procede pour ameliorer l'uniformite des couches epitaxiales, dispositif et produits obtenus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7833831A FR2443137A1 (fr) | 1978-11-30 | 1978-11-30 | Procede pour ameliorer l'uniformite des couches epitaxiales, dispositif et produits obtenus |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2443137A1 true FR2443137A1 (fr) | 1980-06-27 |
Family
ID=9215547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7833831A Withdrawn FR2443137A1 (fr) | 1978-11-30 | 1978-11-30 | Procede pour ameliorer l'uniformite des couches epitaxiales, dispositif et produits obtenus |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2443137A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2579488A1 (fr) * | 1985-03-26 | 1986-10-03 | Canon Kk | Procede pour regler la densite de particules fines |
US4909914A (en) * | 1985-05-11 | 1990-03-20 | Canon Kabushiki Kaisha | Reaction apparatus which introduces one reacting substance within a convergent-divergent nozzle |
US4911805A (en) * | 1985-03-26 | 1990-03-27 | Canon Kabushiki Kaisha | Apparatus and process for producing a stable beam of fine particles |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1268600B (de) * | 1964-11-16 | 1968-05-22 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer einkristallinen, insbesondere dotiertenHalbleiterschicht |
DE1457139A1 (de) * | 1965-05-19 | 1969-03-27 | Siemens Ag | Verfahren zum Herstellen von Halbleiteranordnungen |
US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
US4000716A (en) * | 1970-08-12 | 1977-01-04 | Hitachi, Ltd. | Epitaxial growth device |
-
1978
- 1978-11-30 FR FR7833831A patent/FR2443137A1/fr not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1268600B (de) * | 1964-11-16 | 1968-05-22 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer einkristallinen, insbesondere dotiertenHalbleiterschicht |
DE1457139A1 (de) * | 1965-05-19 | 1969-03-27 | Siemens Ag | Verfahren zum Herstellen von Halbleiteranordnungen |
US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
US4000716A (en) * | 1970-08-12 | 1977-01-04 | Hitachi, Ltd. | Epitaxial growth device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2579488A1 (fr) * | 1985-03-26 | 1986-10-03 | Canon Kk | Procede pour regler la densite de particules fines |
US4911805A (en) * | 1985-03-26 | 1990-03-27 | Canon Kabushiki Kaisha | Apparatus and process for producing a stable beam of fine particles |
US4909914A (en) * | 1985-05-11 | 1990-03-20 | Canon Kabushiki Kaisha | Reaction apparatus which introduces one reacting substance within a convergent-divergent nozzle |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |