JPS57162378A - Novel indium antimony series composite crystal semiconductor - Google Patents
Novel indium antimony series composite crystal semiconductorInfo
- Publication number
- JPS57162378A JPS57162378A JP56046962A JP4696281A JPS57162378A JP S57162378 A JPS57162378 A JP S57162378A JP 56046962 A JP56046962 A JP 56046962A JP 4696281 A JP4696281 A JP 4696281A JP S57162378 A JPS57162378 A JP S57162378A
- Authority
- JP
- Japan
- Prior art keywords
- series composite
- crystal semiconductor
- composite crystal
- indium antimony
- insb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56046962A JPS57162378A (en) | 1981-03-30 | 1981-03-30 | Novel indium antimony series composite crystal semiconductor |
US06/361,939 US4468415A (en) | 1981-03-30 | 1982-03-25 | Indium-antimony complex crystal semiconductor and process for production thereof |
AT82102605T ATE20629T1 (de) | 1981-03-30 | 1982-03-27 | Indium-antimon-halbleiter mit komplexer kristalliner struktur und verfahren zu seiner herstellung. |
DE8282102605T DE3271874D1 (en) | 1981-03-30 | 1982-03-27 | Indium-antimony complex crystal semiconductor and process for production thereof |
EP82102605A EP0062818B2 (en) | 1981-03-30 | 1982-03-27 | Process of producing a hall element or magnetoresistive element comprising an indium-antimony complex crystal semiconductor |
KR8201347A KR860000161B1 (ko) | 1981-03-30 | 1982-03-29 | 인듐 안티몬계 복합 결정반도체 및 그 제조방법 |
US06/620,645 US4539178A (en) | 1981-03-30 | 1984-06-14 | Indium-antimony complex crystal semiconductor and process for production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56046962A JPS57162378A (en) | 1981-03-30 | 1981-03-30 | Novel indium antimony series composite crystal semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57162378A true JPS57162378A (en) | 1982-10-06 |
Family
ID=12761897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56046962A Pending JPS57162378A (en) | 1981-03-30 | 1981-03-30 | Novel indium antimony series composite crystal semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57162378A (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5577130A (en) * | 1978-12-06 | 1980-06-10 | Mitsubishi Monsanto Chem Co | Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound |
JPS5577131A (en) * | 1978-12-06 | 1980-06-10 | Mitsubishi Monsanto Chem Co | Vapor phase growth of compound semiconductor epitaxial film |
-
1981
- 1981-03-30 JP JP56046962A patent/JPS57162378A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5577130A (en) * | 1978-12-06 | 1980-06-10 | Mitsubishi Monsanto Chem Co | Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound |
JPS5577131A (en) * | 1978-12-06 | 1980-06-10 | Mitsubishi Monsanto Chem Co | Vapor phase growth of compound semiconductor epitaxial film |
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