JPS55153382A - Production of insb thin hall element - Google Patents

Production of insb thin hall element

Info

Publication number
JPS55153382A
JPS55153382A JP6174579A JP6174579A JPS55153382A JP S55153382 A JPS55153382 A JP S55153382A JP 6174579 A JP6174579 A JP 6174579A JP 6174579 A JP6174579 A JP 6174579A JP S55153382 A JPS55153382 A JP S55153382A
Authority
JP
Japan
Prior art keywords
substrate
hall element
production
mixture
various characteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6174579A
Other languages
Japanese (ja)
Other versions
JPS6250994B2 (en
Inventor
Masanori Konuma
Masami Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP6174579A priority Critical patent/JPS55153382A/en
Publication of JPS55153382A publication Critical patent/JPS55153382A/en
Publication of JPS6250994B2 publication Critical patent/JPS6250994B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To eliminate the varience in various characteristics of the thin Hall element for greater stability thereof by evaporating the mixture of In and Sb on a substrate at a higher speed than that of the conventional vaporation, being placed on the evaporation source in such a manner that the Sb is slightly excessive in terms of mol ratio. CONSTITUTION:The mixture 4 of In and Sb is placed on a boat for heating specimen in a vacuum device and evaporated on the substrate 5 under vacuum at a speed of roughly 5,000-7,500Angstrom /min. At the same time, the substrate 5 is heated with the heater 6 up to 350-500 deg.C and maintained under this condition to have the InSb alloy evaporated on the substrate 5. This facilitates the combination between In and Sb in the thin film Hall element and eliminates the variance in various characteristics thereby stabilizing thereof.
JP6174579A 1979-05-18 1979-05-18 Production of insb thin hall element Granted JPS55153382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6174579A JPS55153382A (en) 1979-05-18 1979-05-18 Production of insb thin hall element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6174579A JPS55153382A (en) 1979-05-18 1979-05-18 Production of insb thin hall element

Publications (2)

Publication Number Publication Date
JPS55153382A true JPS55153382A (en) 1980-11-29
JPS6250994B2 JPS6250994B2 (en) 1987-10-28

Family

ID=13180009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6174579A Granted JPS55153382A (en) 1979-05-18 1979-05-18 Production of insb thin hall element

Country Status (1)

Country Link
JP (1) JPS55153382A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0383080U (en) * 1989-12-14 1991-08-23

Also Published As

Publication number Publication date
JPS6250994B2 (en) 1987-10-28

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