JPS5660078A - Magnetic reluctance effect element - Google Patents

Magnetic reluctance effect element

Info

Publication number
JPS5660078A
JPS5660078A JP13553079A JP13553079A JPS5660078A JP S5660078 A JPS5660078 A JP S5660078A JP 13553079 A JP13553079 A JP 13553079A JP 13553079 A JP13553079 A JP 13553079A JP S5660078 A JPS5660078 A JP S5660078A
Authority
JP
Japan
Prior art keywords
crystal
magnetic reluctance
substrate
source
reluctance effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13553079A
Other languages
Japanese (ja)
Other versions
JPS6250993B2 (en
Inventor
Masahide Oshita
Masaaki Inishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP13553079A priority Critical patent/JPS5660078A/en
Publication of JPS5660078A publication Critical patent/JPS5660078A/en
Publication of JPS6250993B2 publication Critical patent/JPS6250993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To increase the magnetic reluctance effect in the magnetic reluctance effect element by forming a linear crystal of the component element of the semiconductor of an intermetallic compound semiconductor thin film having a component prependicular to the control current in the thin film. CONSTITUTION:In and Sb are evaporated from an In evaporation source 16 and an Sb evaporation source 17 and are deposited on a substrate 18 made of mica or the like in a vacuum evaporating container 15. When the crystal of InSb is produced, the heating current of the In source 16 is gradually increased, the heating current of the Sb source 17 is maintained constantly, and the ratio of the incident molecular density of In to the substrate 18 is increased. Thus, In crystal is formed in the boundary of the InSb crystal thus grown, and is obliquely grown linearly with respect to the substrate 18. The linear crystal of the In has higher conductivity than the Sb crystal and larger magnetic reluctance can be thus effected.
JP13553079A 1979-10-19 1979-10-19 Magnetic reluctance effect element Granted JPS5660078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13553079A JPS5660078A (en) 1979-10-19 1979-10-19 Magnetic reluctance effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13553079A JPS5660078A (en) 1979-10-19 1979-10-19 Magnetic reluctance effect element

Publications (2)

Publication Number Publication Date
JPS5660078A true JPS5660078A (en) 1981-05-23
JPS6250993B2 JPS6250993B2 (en) 1987-10-28

Family

ID=15153917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13553079A Granted JPS5660078A (en) 1979-10-19 1979-10-19 Magnetic reluctance effect element

Country Status (1)

Country Link
JP (1) JPS5660078A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612137U (en) * 1985-05-27 1986-01-08 株式会社伊藤喜工作所 desk height adjustment device
US6335675B1 (en) 1999-03-18 2002-01-01 Tdk Corporation Semiconductor magnetoresistance device, making method and magnetic sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612137U (en) * 1985-05-27 1986-01-08 株式会社伊藤喜工作所 desk height adjustment device
JPS6137312Y2 (en) * 1985-05-27 1986-10-29
US6335675B1 (en) 1999-03-18 2002-01-01 Tdk Corporation Semiconductor magnetoresistance device, making method and magnetic sensor

Also Published As

Publication number Publication date
JPS6250993B2 (en) 1987-10-28

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