Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP2993376ApriorityCriticalpatent/JPS52114267A/en
Publication of JPS52114267ApublicationCriticalpatent/JPS52114267A/en
PURPOSE: To increase Hall coefficient by heating the In Sb to be formed on a substrate having a layer containing a given volume of a B oxide or Ba oxide and Al2O3, under its melting point in inert gas.
COPYRIGHT: (C)1977,JPO&Japio
JP2993376A1976-03-221976-03-22Production of thin insb film
PendingJPS52114267A
(en)