JPS57162360A - Complementary insulated gate field effect semiconductor device - Google Patents

Complementary insulated gate field effect semiconductor device

Info

Publication number
JPS57162360A
JPS57162360A JP56047382A JP4738281A JPS57162360A JP S57162360 A JPS57162360 A JP S57162360A JP 56047382 A JP56047382 A JP 56047382A JP 4738281 A JP4738281 A JP 4738281A JP S57162360 A JPS57162360 A JP S57162360A
Authority
JP
Japan
Prior art keywords
type
layer
forming
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56047382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362904B2 (enrdf_load_stackoverflow
Inventor
Kohei Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56047382A priority Critical patent/JPS57162360A/ja
Publication of JPS57162360A publication Critical patent/JPS57162360A/ja
Publication of JPS6362904B2 publication Critical patent/JPS6362904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56047382A 1981-03-31 1981-03-31 Complementary insulated gate field effect semiconductor device Granted JPS57162360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047382A JPS57162360A (en) 1981-03-31 1981-03-31 Complementary insulated gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047382A JPS57162360A (en) 1981-03-31 1981-03-31 Complementary insulated gate field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS57162360A true JPS57162360A (en) 1982-10-06
JPS6362904B2 JPS6362904B2 (enrdf_load_stackoverflow) 1988-12-05

Family

ID=12773544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047382A Granted JPS57162360A (en) 1981-03-31 1981-03-31 Complementary insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162360A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126859A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd 半導体装置の製造方法
JPH02114661A (ja) * 1988-09-20 1990-04-26 American Teleph & Telegr Co <Att> 集積回路
JPH03248554A (ja) * 1990-02-27 1991-11-06 Toshiba Corp Ｃｍｏｓ半導体集積回路装置
US5136355A (en) * 1987-11-25 1992-08-04 Marconi Electronic Devices Limited Interconnecting layer on a semiconductor substrate
JP2008147374A (ja) * 2006-12-08 2008-06-26 Fujitsu Ltd 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6368105U (enrdf_load_stackoverflow) * 1986-10-24 1988-05-09

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127291A (en) * 1978-03-27 1979-10-03 Cho Lsi Gijutsu Kenkyu Kumiai Mos semiconductor ic device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127291A (en) * 1978-03-27 1979-10-03 Cho Lsi Gijutsu Kenkyu Kumiai Mos semiconductor ic device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126859A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd 半導体装置の製造方法
US5136355A (en) * 1987-11-25 1992-08-04 Marconi Electronic Devices Limited Interconnecting layer on a semiconductor substrate
JPH02114661A (ja) * 1988-09-20 1990-04-26 American Teleph & Telegr Co <Att> 集積回路
JPH03248554A (ja) * 1990-02-27 1991-11-06 Toshiba Corp Ｃｍｏｓ半導体集積回路装置
JP2008147374A (ja) * 2006-12-08 2008-06-26 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
JPS6362904B2 (enrdf_load_stackoverflow) 1988-12-05

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