JPS57157523A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS57157523A
JPS57157523A JP4231781A JP4231781A JPS57157523A JP S57157523 A JPS57157523 A JP S57157523A JP 4231781 A JP4231781 A JP 4231781A JP 4231781 A JP4231781 A JP 4231781A JP S57157523 A JPS57157523 A JP S57157523A
Authority
JP
Japan
Prior art keywords
film
ions
pattern
resist
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4231781A
Other languages
English (en)
Inventor
Kozo Mochiji
Yasuo Wada
Shizunori Ooyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4231781A priority Critical patent/JPS57157523A/ja
Priority to EP19820301537 priority patent/EP0061350B1/en
Priority to DE8282301537T priority patent/DE3273273D1/de
Publication of JPS57157523A publication Critical patent/JPS57157523A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
JP4231781A 1981-03-25 1981-03-25 Forming method for pattern Pending JPS57157523A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4231781A JPS57157523A (en) 1981-03-25 1981-03-25 Forming method for pattern
EP19820301537 EP0061350B1 (en) 1981-03-25 1982-03-24 Method of forming pattern
DE8282301537T DE3273273D1 (en) 1981-03-25 1982-03-24 Method of forming pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4231781A JPS57157523A (en) 1981-03-25 1981-03-25 Forming method for pattern

Publications (1)

Publication Number Publication Date
JPS57157523A true JPS57157523A (en) 1982-09-29

Family

ID=12632633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4231781A Pending JPS57157523A (en) 1981-03-25 1981-03-25 Forming method for pattern

Country Status (3)

Country Link
EP (1) EP0061350B1 (ja)
JP (1) JPS57157523A (ja)
DE (1) DE3273273D1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428821A (en) * 1987-07-23 1989-01-31 Matsushita Electric Ind Co Ltd Fine pattern formation
KR100338940B1 (ko) * 1999-11-18 2002-05-31 박종섭 반도체 장치의 콘택홀 형성방법
KR100422958B1 (ko) * 1996-12-31 2004-06-11 주식회사 하이닉스반도체 아르곤이온주입처리를통한미세패턴형성방법
KR20110027597A (ko) 2009-09-08 2011-03-16 도쿄엘렉트론가부시키가이샤 피처리체의 처리 방법 및 컴퓨터 판독 가능한 기억 매체
JP2016504599A (ja) * 2013-01-11 2016-02-12 エフ・イ−・アイ・カンパニー エッチング速度を変化させるためのイオン注入

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63208049A (ja) * 1987-02-24 1988-08-29 Nec Corp 半導体製造用マスクの製造方法およびその装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141963A (en) * 1974-10-07 1976-04-08 Suwa Seikosha Kk Shusekikairosochino kozo
JPS5244571A (en) * 1975-10-06 1977-04-07 Nec Corp Method of forming fine pattern

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3743842A (en) * 1972-01-14 1973-07-03 Massachusetts Inst Technology Soft x-ray lithographic apparatus and process
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
JPS576578B2 (ja) * 1973-11-05 1982-02-05
NL7401859A (nl) * 1974-02-12 1975-08-14 Philips Nv Werkwijze voor het vervaardigen van een patroon en of meer lagen op een ondergrond door selijk verwijderen van deze laag of lagen sputteretsen en voorwerpen, in het bijzon- alfgeleiderinrichtingen, vervaardigd met ssing van deze werkwijze.
US4341592A (en) * 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
DE2723933A1 (de) * 1975-12-04 1978-06-01 Siemens Ag Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante
DE2625870A1 (de) * 1976-06-09 1977-12-22 Siemens Ag Fotolithografisches aetzverfahren
NL7608002A (nl) * 1976-07-20 1978-01-24 Philips Nv Werkwijze ter vervaardiging van een magnetische inrichting.
DE2748401A1 (de) * 1977-10-28 1979-05-03 Licentia Gmbh Halbleiteranordnung
US4208241A (en) * 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141963A (en) * 1974-10-07 1976-04-08 Suwa Seikosha Kk Shusekikairosochino kozo
JPS5244571A (en) * 1975-10-06 1977-04-07 Nec Corp Method of forming fine pattern

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428821A (en) * 1987-07-23 1989-01-31 Matsushita Electric Ind Co Ltd Fine pattern formation
KR100422958B1 (ko) * 1996-12-31 2004-06-11 주식회사 하이닉스반도체 아르곤이온주입처리를통한미세패턴형성방법
KR100338940B1 (ko) * 1999-11-18 2002-05-31 박종섭 반도체 장치의 콘택홀 형성방법
KR20110027597A (ko) 2009-09-08 2011-03-16 도쿄엘렉트론가부시키가이샤 피처리체의 처리 방법 및 컴퓨터 판독 가능한 기억 매체
US8759227B2 (en) 2009-09-08 2014-06-24 Tokyo Electron Limited Method for processing a target object
JP2016504599A (ja) * 2013-01-11 2016-02-12 エフ・イ−・アイ・カンパニー エッチング速度を変化させるためのイオン注入
US10325754B2 (en) 2013-01-11 2019-06-18 Fei Company Ion implantation to alter etch rate

Also Published As

Publication number Publication date
EP0061350B1 (en) 1986-09-17
DE3273273D1 (en) 1986-10-23
EP0061350A1 (en) 1982-09-29

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