JPS57155778A - Manufacture of schottky barrier gate fet - Google Patents

Manufacture of schottky barrier gate fet

Info

Publication number
JPS57155778A
JPS57155778A JP4149681A JP4149681A JPS57155778A JP S57155778 A JPS57155778 A JP S57155778A JP 4149681 A JP4149681 A JP 4149681A JP 4149681 A JP4149681 A JP 4149681A JP S57155778 A JPS57155778 A JP S57155778A
Authority
JP
Japan
Prior art keywords
film
opening
gate
insulating film
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4149681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0117271B2 (enrdf_load_stackoverflow
Inventor
Yoichiro Takayama
Hideaki Kozu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4149681A priority Critical patent/JPS57155778A/ja
Publication of JPS57155778A publication Critical patent/JPS57155778A/ja
Publication of JPH0117271B2 publication Critical patent/JPH0117271B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP4149681A 1981-03-20 1981-03-20 Manufacture of schottky barrier gate fet Granted JPS57155778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4149681A JPS57155778A (en) 1981-03-20 1981-03-20 Manufacture of schottky barrier gate fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4149681A JPS57155778A (en) 1981-03-20 1981-03-20 Manufacture of schottky barrier gate fet

Publications (2)

Publication Number Publication Date
JPS57155778A true JPS57155778A (en) 1982-09-25
JPH0117271B2 JPH0117271B2 (enrdf_load_stackoverflow) 1989-03-29

Family

ID=12609957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4149681A Granted JPS57155778A (en) 1981-03-20 1981-03-20 Manufacture of schottky barrier gate fet

Country Status (1)

Country Link
JP (1) JPS57155778A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873164A (ja) * 1981-10-27 1983-05-02 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873164A (ja) * 1981-10-27 1983-05-02 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法

Also Published As

Publication number Publication date
JPH0117271B2 (enrdf_load_stackoverflow) 1989-03-29

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