JPS57153429A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57153429A
JPS57153429A JP56038491A JP3849181A JPS57153429A JP S57153429 A JPS57153429 A JP S57153429A JP 56038491 A JP56038491 A JP 56038491A JP 3849181 A JP3849181 A JP 3849181A JP S57153429 A JPS57153429 A JP S57153429A
Authority
JP
Japan
Prior art keywords
film
excessive
ions
approximately
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56038491A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0516174B2 (enExample
Inventor
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56038491A priority Critical patent/JPS57153429A/ja
Publication of JPS57153429A publication Critical patent/JPS57153429A/ja
Publication of JPH0516174B2 publication Critical patent/JPH0516174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP56038491A 1981-03-17 1981-03-17 Manufacture of semiconductor device Granted JPS57153429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56038491A JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56038491A JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57153429A true JPS57153429A (en) 1982-09-22
JPH0516174B2 JPH0516174B2 (enExample) 1993-03-03

Family

ID=12526727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56038491A Granted JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153429A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US5447885A (en) * 1993-10-25 1995-09-05 Samsung Electronics Co., Ltd. Isolation method of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536935A (en) * 1978-09-06 1980-03-14 Hitachi Ltd Manufacturing of semiconductor device
JPS55162234A (en) * 1979-06-05 1980-12-17 Agency Of Ind Science & Technol Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536935A (en) * 1978-09-06 1980-03-14 Hitachi Ltd Manufacturing of semiconductor device
JPS55162234A (en) * 1979-06-05 1980-12-17 Agency Of Ind Science & Technol Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US5447885A (en) * 1993-10-25 1995-09-05 Samsung Electronics Co., Ltd. Isolation method of semiconductor device

Also Published As

Publication number Publication date
JPH0516174B2 (enExample) 1993-03-03

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