JPS57141961A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS57141961A JPS57141961A JP56026790A JP2679081A JPS57141961A JP S57141961 A JPS57141961 A JP S57141961A JP 56026790 A JP56026790 A JP 56026790A JP 2679081 A JP2679081 A JP 2679081A JP S57141961 A JPS57141961 A JP S57141961A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- thin film
- film transistor
- film
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56026790A JPS57141961A (en) | 1981-02-27 | 1981-02-27 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56026790A JPS57141961A (en) | 1981-02-27 | 1981-02-27 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57141961A true JPS57141961A (en) | 1982-09-02 |
| JPH0330296B2 JPH0330296B2 (enrdf_load_stackoverflow) | 1991-04-26 |
Family
ID=12203103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56026790A Granted JPS57141961A (en) | 1981-02-27 | 1981-02-27 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57141961A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254660A (ja) * | 1984-05-14 | 1985-12-16 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 薄膜電界効果トランジスタとその作製方法 |
| JPS61150278A (ja) * | 1984-12-25 | 1986-07-08 | Toshiba Corp | 薄膜トランジスタ |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201800009452A1 (it) | 2018-10-15 | 2020-04-15 | Cannon Ergos Spa | Metodo ed apparato per l'avanzamento di articoli da termoformare |
-
1981
- 1981-02-27 JP JP56026790A patent/JPS57141961A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254660A (ja) * | 1984-05-14 | 1985-12-16 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 薄膜電界効果トランジスタとその作製方法 |
| JPS60254661A (ja) * | 1984-05-14 | 1985-12-16 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 集積回路と両立可能な改良された薄膜電界効果トランジスタとその製造方法 |
| JPS61150278A (ja) * | 1984-12-25 | 1986-07-08 | Toshiba Corp | 薄膜トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0330296B2 (enrdf_load_stackoverflow) | 1991-04-26 |
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