JPS5713180A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5713180A JPS5713180A JP8617080A JP8617080A JPS5713180A JP S5713180 A JPS5713180 A JP S5713180A JP 8617080 A JP8617080 A JP 8617080A JP 8617080 A JP8617080 A JP 8617080A JP S5713180 A JPS5713180 A JP S5713180A
- Authority
- JP
- Japan
- Prior art keywords
- patterns
- layer
- wiring
- pattern
- dummy pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8617080A JPS5713180A (en) | 1980-06-25 | 1980-06-25 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8617080A JPS5713180A (en) | 1980-06-25 | 1980-06-25 | Etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5713180A true JPS5713180A (en) | 1982-01-23 |
JPS6211068B2 JPS6211068B2 (ja) | 1987-03-10 |
Family
ID=13879276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8617080A Granted JPS5713180A (en) | 1980-06-25 | 1980-06-25 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5713180A (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5941839A (ja) * | 1982-08-31 | 1984-03-08 | Fujitsu Ltd | パタ−ン形成方法 |
JPS5950527A (ja) * | 1982-09-16 | 1984-03-23 | Hitachi Ltd | 半導体装置 |
JPS60148118A (ja) * | 1984-01-13 | 1985-08-05 | Toshiba Corp | 半導体装置 |
JPS60177669A (ja) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | 半導体メモリ装置 |
JPS6289331A (ja) * | 1985-10-16 | 1987-04-23 | Toshiba Corp | 微細パタ−ンの加工方法 |
JPS62123722A (ja) * | 1985-11-22 | 1987-06-05 | Nec Corp | 半導体装置 |
JPS62503204A (ja) * | 1985-06-28 | 1987-12-17 | アメリカン テレフオン アンド テレグラフ カムパニ− | ドライエッチングを含むデバイスの製作プロセス |
JPS6334926A (ja) * | 1986-07-29 | 1988-02-15 | Toshiba Corp | 半導体装置のパタ−ン形成方法 |
JPS63138738A (ja) * | 1986-12-01 | 1988-06-10 | Ricoh Co Ltd | 半導体装置の製造方法 |
JPH04142739A (ja) * | 1990-10-03 | 1992-05-15 | Nec Corp | 半導体集積回路装置 |
-
1980
- 1980-06-25 JP JP8617080A patent/JPS5713180A/ja active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0367335B2 (ja) * | 1982-08-31 | 1991-10-22 | Fujitsu Ltd | |
JPS5941839A (ja) * | 1982-08-31 | 1984-03-08 | Fujitsu Ltd | パタ−ン形成方法 |
JPS5950527A (ja) * | 1982-09-16 | 1984-03-23 | Hitachi Ltd | 半導体装置 |
JPS60148118A (ja) * | 1984-01-13 | 1985-08-05 | Toshiba Corp | 半導体装置 |
JPS60177669A (ja) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | 半導体メモリ装置 |
US5416347A (en) * | 1984-02-24 | 1995-05-16 | Hitachi, Ltd. | Semiconductor memory device with additional conductive line to prevent line breakage |
JPS62503204A (ja) * | 1985-06-28 | 1987-12-17 | アメリカン テレフオン アンド テレグラフ カムパニ− | ドライエッチングを含むデバイスの製作プロセス |
JPS6289331A (ja) * | 1985-10-16 | 1987-04-23 | Toshiba Corp | 微細パタ−ンの加工方法 |
JPH0471334B2 (ja) * | 1985-10-16 | 1992-11-13 | Tokyo Shibaura Electric Co | |
JPS62123722A (ja) * | 1985-11-22 | 1987-06-05 | Nec Corp | 半導体装置 |
JPS6334926A (ja) * | 1986-07-29 | 1988-02-15 | Toshiba Corp | 半導体装置のパタ−ン形成方法 |
JPS63138738A (ja) * | 1986-12-01 | 1988-06-10 | Ricoh Co Ltd | 半導体装置の製造方法 |
JPH04142739A (ja) * | 1990-10-03 | 1992-05-15 | Nec Corp | 半導体集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6211068B2 (ja) | 1987-03-10 |
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