JPS57115864A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS57115864A
JPS57115864A JP203881A JP203881A JPS57115864A JP S57115864 A JPS57115864 A JP S57115864A JP 203881 A JP203881 A JP 203881A JP 203881 A JP203881 A JP 203881A JP S57115864 A JPS57115864 A JP S57115864A
Authority
JP
Japan
Prior art keywords
layer
type
metal
type inp
ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP203881A
Other languages
English (en)
Other versions
JPH0224030B2 (ja
Inventor
Hideto Furuyama
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP203881A priority Critical patent/JPS57115864A/ja
Publication of JPS57115864A publication Critical patent/JPS57115864A/ja
Publication of JPH0224030B2 publication Critical patent/JPH0224030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP203881A 1981-01-12 1981-01-12 Compound semiconductor device Granted JPS57115864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP203881A JPS57115864A (en) 1981-01-12 1981-01-12 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP203881A JPS57115864A (en) 1981-01-12 1981-01-12 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS57115864A true JPS57115864A (en) 1982-07-19
JPH0224030B2 JPH0224030B2 (ja) 1990-05-28

Family

ID=11518147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP203881A Granted JPS57115864A (en) 1981-01-12 1981-01-12 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS57115864A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941867A (ja) * 1982-03-31 1984-03-08 Anritsu Corp 貫通穴を有するセラミックス部品の製造方法
JPS59119776A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 発光半導体装置
JPS59220966A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体装置
JPH03103840U (ja) * 1990-02-13 1991-10-29

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497628A (ja) * 1972-05-25 1974-01-23
JPS5348670A (en) * 1976-10-15 1978-05-02 Toshiba Corp Electrode structure of semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497628A (ja) * 1972-05-25 1974-01-23
JPS5348670A (en) * 1976-10-15 1978-05-02 Toshiba Corp Electrode structure of semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941867A (ja) * 1982-03-31 1984-03-08 Anritsu Corp 貫通穴を有するセラミックス部品の製造方法
JPS59119776A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 発光半導体装置
JPS59220966A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 半導体装置
JPH03103840U (ja) * 1990-02-13 1991-10-29

Also Published As

Publication number Publication date
JPH0224030B2 (ja) 1990-05-28

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