JPS5723222A - Formation of semiconductor element electrode - Google Patents
Formation of semiconductor element electrodeInfo
- Publication number
- JPS5723222A JPS5723222A JP9837380A JP9837380A JPS5723222A JP S5723222 A JPS5723222 A JP S5723222A JP 9837380 A JP9837380 A JP 9837380A JP 9837380 A JP9837380 A JP 9837380A JP S5723222 A JPS5723222 A JP S5723222A
- Authority
- JP
- Japan
- Prior art keywords
- evaporated
- alloy
- temperature
- inverted
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229910001020 Au alloy Inorganic materials 0.000 abstract 3
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the ohmic electrode having an excellent adhesive property by a method wherein, after processing the surface of a III-V group compound semiconductor containing an Al using an inverted sputtering method, an Au or an Au alloy is evaporated by sputtering and, in addition, an Au alloy is evaporated. CONSTITUTION:A GaAlAs is oxidized intensively in the air and is covered by an oxide film in several seconds. First, the oxide on the surface is removed by performing an inverted sputtering method using an Ar gas and oxidization is prevented by performing an evaporation at an approximae temperature of 200 deg.C without destorying the vacuum state. The above material is picked out from the device, approximately 1mum of AuGe is evaporated at the substrate temperature of 250 deg.C and the work is completed after processing at the temperature of 500 deg.C. According to this constitution, no exfoliation is generated when an electrode pattern is formed and wires are connected. Si, Be, Zn, Sb, Ga or Sn may be used for the Au alloy besides Ge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9837380A JPS5723222A (en) | 1980-07-17 | 1980-07-17 | Formation of semiconductor element electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9837380A JPS5723222A (en) | 1980-07-17 | 1980-07-17 | Formation of semiconductor element electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5723222A true JPS5723222A (en) | 1982-02-06 |
Family
ID=14218070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9837380A Pending JPS5723222A (en) | 1980-07-17 | 1980-07-17 | Formation of semiconductor element electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5723222A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313327A (en) * | 1986-07-04 | 1988-01-20 | Fujitsu Ltd | Formation of ohmic electrode |
| JPH02116750U (en) * | 1990-03-15 | 1990-09-19 |
-
1980
- 1980-07-17 JP JP9837380A patent/JPS5723222A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313327A (en) * | 1986-07-04 | 1988-01-20 | Fujitsu Ltd | Formation of ohmic electrode |
| JPH0581048B2 (en) * | 1986-07-04 | 1993-11-11 | Fujitsu Ltd | |
| JPH02116750U (en) * | 1990-03-15 | 1990-09-19 |
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