JPS6477946A - Method and device for forming film through sputtering - Google Patents

Method and device for forming film through sputtering

Info

Publication number
JPS6477946A
JPS6477946A JP23364687A JP23364687A JPS6477946A JP S6477946 A JPS6477946 A JP S6477946A JP 23364687 A JP23364687 A JP 23364687A JP 23364687 A JP23364687 A JP 23364687A JP S6477946 A JPS6477946 A JP S6477946A
Authority
JP
Japan
Prior art keywords
section
sputtering
aluminum
wiring layer
overhang
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23364687A
Other languages
Japanese (ja)
Inventor
Ryuji Iwama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23364687A priority Critical patent/JPS6477946A/en
Publication of JPS6477946A publication Critical patent/JPS6477946A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the coatibility of a stepped section by removing an overhang generated in a film formed by sputtering and deposited onto the stopped section through ion milling and forming a film through sputtering. CONSTITUTION:An aluminum wiring layer 3 is sputtered to a stopped section (a contact hole) on a semiconductor substrate 1. The aluminum layer 3 is ion- milled. Consequently, an overhang section is gotten rid of through the incident- angle dependency of ion milling. Aluminum is sputtered onto the aluminum wiring layer, from which the overhang section is taken off, again. Lastly, the shape of the stepped section is shaped finely through milling, thus completing an aluminum wiring layer 5, the coatability of the stepped section of which is improved. Sputtering and ion milling may be repeated any times as required.
JP23364687A 1987-09-19 1987-09-19 Method and device for forming film through sputtering Pending JPS6477946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23364687A JPS6477946A (en) 1987-09-19 1987-09-19 Method and device for forming film through sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23364687A JPS6477946A (en) 1987-09-19 1987-09-19 Method and device for forming film through sputtering

Publications (1)

Publication Number Publication Date
JPS6477946A true JPS6477946A (en) 1989-03-23

Family

ID=16958303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23364687A Pending JPS6477946A (en) 1987-09-19 1987-09-19 Method and device for forming film through sputtering

Country Status (1)

Country Link
JP (1) JPS6477946A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6951601B1 (en) 1994-09-01 2005-10-04 Denso Corporation Oxygen concentration detector
JP2009141230A (en) * 2007-12-10 2009-06-25 Fuji Electric Device Technology Co Ltd Method of manufacturing semiconductor device and sputtering apparatus for manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6951601B1 (en) 1994-09-01 2005-10-04 Denso Corporation Oxygen concentration detector
JP2009141230A (en) * 2007-12-10 2009-06-25 Fuji Electric Device Technology Co Ltd Method of manufacturing semiconductor device and sputtering apparatus for manufacturing semiconductor device

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