JPS5580722A - Arsenic recovering method - Google Patents
Arsenic recovering methodInfo
- Publication number
- JPS5580722A JPS5580722A JP15454478A JP15454478A JPS5580722A JP S5580722 A JPS5580722 A JP S5580722A JP 15454478 A JP15454478 A JP 15454478A JP 15454478 A JP15454478 A JP 15454478A JP S5580722 A JPS5580722 A JP S5580722A
- Authority
- JP
- Japan
- Prior art keywords
- arsenic
- contg
- vapor
- gas
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Treating Waste Gases (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To economically recover arsenic with high work efficiency, in vapor phase growth of an arsenic-contg. III-V group element semiconductor, by setting a metallic material at the lower course of a growing region in a reaction tube and keeping the material at a temp. at which at least the material surface becomes a molten state in the presence of arsenic vapor to allow arsenic to be absorbed.
CONSTITUTION: Gas 2 for vapor phase growing an arsenic-contg. IIIWV group element semiconductor such as GaAs, InAs, GaAsP or GaInAS is introduced onto substrate crystal 2 from the upper course of reaction tube 1. Cas 2 is then contacted to arsenic recovering matallic material 5 through backward flow preventing jig 4 to allow arsenic in gas 2 to be absorbed, and arsenic-free exhaust gas is released from exhaust port 6. As material 5 indium, gallium, aluminum, iron, bismuth, platinum or an alloy contg. the metal is used, and it is kept at a temp. enough to hold at least the material surface at a molten state in the presence of arsenic vapor.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15454478A JPS5580722A (en) | 1978-12-12 | 1978-12-12 | Arsenic recovering method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15454478A JPS5580722A (en) | 1978-12-12 | 1978-12-12 | Arsenic recovering method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5580722A true JPS5580722A (en) | 1980-06-18 |
Family
ID=15586569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15454478A Pending JPS5580722A (en) | 1978-12-12 | 1978-12-12 | Arsenic recovering method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5580722A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60175522A (en) * | 1984-02-23 | 1985-09-09 | World Giken:Kk | Composition for treating waste gas during semiconductor manufacturing process |
US4869735A (en) * | 1987-04-30 | 1989-09-26 | Mitsubishi Jukogyo K.K. | Adsorbent for arsenic compound and method for removing arsenic compound from combustion gas |
-
1978
- 1978-12-12 JP JP15454478A patent/JPS5580722A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60175522A (en) * | 1984-02-23 | 1985-09-09 | World Giken:Kk | Composition for treating waste gas during semiconductor manufacturing process |
JPS6331252B2 (en) * | 1984-02-23 | 1988-06-23 | Waarudo Giken Kk | |
US4869735A (en) * | 1987-04-30 | 1989-09-26 | Mitsubishi Jukogyo K.K. | Adsorbent for arsenic compound and method for removing arsenic compound from combustion gas |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5580722A (en) | Arsenic recovering method | |
Ito et al. | Growth of p-type InP single crystals by the temperature gradient method | |
JPS5649520A (en) | Vapor growth of compound semiconductor | |
JPS5384457A (en) | Liquid-phase epitaxial growth method | |
JPS5493358A (en) | Boat for growing for liquid phase epitaxial | |
JPS54162960A (en) | Manufacture of semiconductor device | |
JPS54158166A (en) | Vapor growth method for compound semiconductor crystal | |
JPS52139373A (en) | Treating method for compound semiconductor | |
JPS5618000A (en) | Vapor phase growing method for 3-5 group compound semiconductor | |
JPS5596630A (en) | Method of diffusing gallium | |
JPS5376980A (en) | Gas phase growth method of compound semiconductor | |
JPS54162451A (en) | Heat treatment method of compound semiconductor and its heat treatment unit | |
JPS5920639B2 (en) | Liquid phase epitaxial growth method | |
JPS5649519A (en) | Vapor growth of compound semiconductor | |
JPS5257097A (en) | Method for fabrication of gallium arsenide having steep distribution o f impurity concentration | |
JPS5527669A (en) | Method of forming ohmic electrode to p-type 3-5 group compound semiconductor | |
JPS5286058A (en) | Liquid phase epitaxial growth | |
JPS5591818A (en) | Vapor phase growth of compound semiconductor | |
JPS5559716A (en) | Liquid phase growing method of 3-5 group compound semiconductor | |
JPS5257096A (en) | Method for fabricayion of gallium arsenide having steep distribution o f impurity concentration | |
JPS5257098A (en) | Method for fabrication of gallium arsenide having steep distribution o f impurity concentration | |
JPS54104773A (en) | Growth method and its unit for semiconductor crystal | |
JPS5526635A (en) | Compound semiconductor crystal growth method | |
JPS5562727A (en) | Diffusing method of n-type impurity | |
JPS54103670A (en) | Impurity diffusion method of semiconductor single crystal |